CMOS Class AB Second Generation Voltage Conveyor

Kumngern, Montree; Torteanchai, Usa; Khateb, Fabian

doi:10.1109/icsys47076.2019.8982420

Cited by 11 publications

(11 citation statements)

References 15 publications

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“…Figure 2 shows a conventional class AB current buffer [30]. The translinear loop created by M 1 -M 4 sets the value of the input voltage at zero for I in = 0.…”

Section: Class Ab Vcii Realizationmentioning

confidence: 99%

“…Literature survey shows that there are very few VCII circuits designed in class AB [25][26][27]30]; however, all of them suffer from poor current drive capability. In [25], a flipped voltage follower (FVF)-based VCII circuit was presented, which can provide an output current up to ±2 mA.…”

Section: Introductionmentioning

confidence: 99%

“…Its current drive capability is limited to ±1.065 mA. The class AB VCII reported in [30] is based on the simple translinear principle. Unfortunately, its cur-rent drive capability is only ±1.22 mA.…”

Section: Introductionmentioning

confidence: 99%

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Towards Realization of a Low-Voltage Class-AB VCII with High Current Drive Capability

et al. 2021

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In this paper, the implementation of a low-voltage class AB second generation voltage conveyor (VCII) with high current drive capability is presented. Simple realization and good overall performance are the main features of the proposed circuit. Proper solutions and techniques were used to achieve high signal swing and high linearity at Y, X and Z ports of VCII as well as low-voltage operation. The operation of the proposed VCII was verified through SPICE simulations based on TSMC 0.18 µm CMOS technology parameters and a supply voltage of ±0.9 V. The small signal impedance values were 973 Ω, 120 kΩ and 217 Ω at Y, X and Z ports, respectively. The maximum current at the X port was ±10 mA with maximum total harmonic distortion (THD) of 2.4% at a frequency of 1 MHz. Considering a bias current (IB) of 29 µA and output current at the X port (IX) of 10 mA, the current drive capability (IX/IB) of about 345 was achieved at the X port. The voltage swing at the Z port was (−0.4, 0.4) V. The THD value at the Z port for an input signal with 0.8 V peak-to-peak value and frequency of 1 MHz was 3.9%. The total power consumption was 0.393 µW.

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“…Figure 2 shows a conventional class AB current buffer [30]. The translinear loop created by M 1 -M 4 sets the value of the input voltage at zero for I in = 0.…”

Section: Class Ab Vcii Realizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Towards Realization of a Low-Voltage Class-AB VCII with High Current Drive Capability

et al. 2021

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“…As for another CMOS realization of VCII, it includes 10 transistors and four ideal current sources 10 . CMOS realization of class AB VCII is made up of 12 transistors and four ideal current sources 22 . However, the main disadvantage of the circuits reported in previous studies 7–10,22 is that they have too many ideal current sources that should be implemented with many transistors.…”

Section: Introductionmentioning

confidence: 99%

“…CMOS realization of class AB VCII is made up of 12 transistors and four ideal current sources 22 . However, the main disadvantage of the circuits reported in previous studies 7–10,22 is that they have too many ideal current sources that should be implemented with many transistors. It should be noted that the ideal current sources used to set the direct current (DC) points in the circuits must either be provided with at least one transistor and a biasing voltage source for each current source or implemented with a single current source and a great number of copying transistors.…”

Section: Introductionmentioning

confidence: 99%

New simple transistor realizations of second‐ generation voltage conveyor

Yeşil

Mınaeı

2020

Circuit Theory & Apps

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Summary In this paper, two new complementary metal oxide semiconductor (CMOS) realizations for second‐generation voltage conveyor (VCII) are presented. The first proposed VCII has a very simple structure employing only six transistors. The second proposed VCII employs 11 transistors, and none of the transistors at both proposed circuits suffer from the body effect. Small‐signal analysis, parasitic elements, and input‐referred noise of the proposed VCIIs are given. Moreover, a new active element called voltage controlled second‐generation voltage conveyor (VC‐VCII) is proposed as dual element of current controlled second‐generation current conveyor (CCCII) active element. Its parasitic resistance at the Y terminal can be controlled electronically. Two presented CMOS structures of VCII are worked as VC‐VCII with slight modification. Proposed circuits are simulated in Cadence Analog environment using TSMC 0.18‐μm process parameters with ±0.9‐V supply voltages. Both CMOS structures occupy a small chip area of 276.8 and 271 μm2, respectively. The bandwidth of the current follower stage of the proposed VCIIs is found as 794 MHz, whereas the bandwidth of the voltage follower stage for the first and second proposed VCIIs is found as 2.57 and 1.92 GHz, respectively. As an application example, voltage‐mode first‐order low‐pass filter has been given with its tunable gain by using VC‐VCII.

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