CMOS-Compatible Optoelectronic Imagers

Abstract

Silicon-based complementary metal oxide semiconductors have revolutionized the field of imaging, especially infrared imaging. Infrared focal plane array imagers are widely applied to night vision, haze imaging, food selection, semiconductor detection, and atmospheric pollutant detection. Over the past several decades, the CMOS integrated circuits modified by traditional bulk semiconductor materials as sensitivity sensors for optoelectronic imagers have been used for infrared imaging. However, traditional bulk semiconductor material-based infrared imagers are synthesized by complicated molecular beam epitaxy, and they are generally coupled with expensive flip-chip-integrated circuits. Hence, high costs and complicated fabrication processes limit the development and popularization of infrared imagers. Emerging materials, such as inorganic–organic metal halide perovskites, organic polymers, and colloidal quantum dots, have become the current focus point for preparing CMOS-compatible optoelectronic imagers, as they can effectively decrease costs. However, these emerging materials also have some problems in coupling with readout integrated circuits and uniformity, which can influence the quality of imagers. The method regarding coupling processes may become a key point for future research directions. In the current review, recent research progress on emerging materials for infrared imagers is summarized.

Special Issue “Application of Advanced Quantum Dots Films in Optoelectronics”

“…Emerging materials, such as inorganic-organic metal halide perovskites, organic polymers, and colloidal quantum dots, have been proposed to develop CMOS-compatible optoelectronic imagers. In the work by Bi et al [3], the fabrication methods and key figures of merit for FPAs were discussed.…”