2013
DOI: 10.1149/05006.0313ecst
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CMOS-Compatible Precise Placement of Ge Quantum Dots for Nanoelectronic, Nanophotonic, and Energy Conversion Devices

Abstract: We have developed a self-assembled CMOS compatible scheme for the generation of Ge QDs through thermal oxidation of Si1-xGex patterned structures as well as demonstrated precise QD placement by guiding Ge nucleus migration along the oxidation path and thus arranging them onto targeted locations where the ultimate oxidation occurs. Thereby a single QD self-aligned with electrodes through nanoscale tunnel barriers of SiO2/Si3N4 is realized for an effective management of single electron tunneling. On the other ha… Show more

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Cited by 2 publications
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“…The matrix elements of the Coulombic interactions, which inherently give the legitimacy to the formation of the collective excitations in the system, defined in Eq. ( 26) [or (28)] are expressed in the simplified form as follows:…”
Section: H the Coulombic Interactionsmentioning
confidence: 99%
“…The matrix elements of the Coulombic interactions, which inherently give the legitimacy to the formation of the collective excitations in the system, defined in Eq. ( 26) [or (28)] are expressed in the simplified form as follows:…”
Section: H the Coulombic Interactionsmentioning
confidence: 99%