Advanced Photonics 2016 (IPR, NOMA, Sensors, Networks, SPPCom, SOF) 2016
DOI: 10.1364/iprsn.2016.itu2b.1
|View full text |Cite
|
Sign up to set email alerts
|

CMOS-compatible Vertical Si-waveguide Coupler Fabricated by Ion Implantation

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
2
0

Year Published

2017
2017
2019
2019

Publication Types

Select...
1
1

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(2 citation statements)
references
References 9 publications
0
2
0
Order By: Relevance
“…One of the main limitations for edge coupling solutions is related to their incompatibility with wafer-level testing of the photonic circuits and devices. A possible solution to this problem has been provided by Yoshida et al [40][41][42][43] who proposed a novel vertical end-fire coupler scheme, also known as an "elephant" coupler. This coupler used a vertically swept SOI strip waveguide, realized by means of an ion implantation process to achieve a radius of curvature in the order of a few μm.…”
Section: Vertical End-fire Couplersmentioning
confidence: 99%
See 1 more Smart Citation
“…One of the main limitations for edge coupling solutions is related to their incompatibility with wafer-level testing of the photonic circuits and devices. A possible solution to this problem has been provided by Yoshida et al [40][41][42][43] who proposed a novel vertical end-fire coupler scheme, also known as an "elephant" coupler. This coupler used a vertically swept SOI strip waveguide, realized by means of an ion implantation process to achieve a radius of curvature in the order of a few μm.…”
Section: Vertical End-fire Couplersmentioning
confidence: 99%
“…The bent waveguide is 5 μm long, and the curvature radius is approximately equal to 3 μm. Reproduced from[43].…”
mentioning
confidence: 99%