CMOS Demodulation Image Sensor for Nanosecond Optical Waveform Analysis

Bonjour, L.; Beyeler, D.; Blanc, Nicolas; Kayal, Maher

doi:10.1109/jsen.2012.2237548

Cited by 7 publications

(1 citation statement)

References 18 publications

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“…SPAD-based methods usually suffer from either having a limited area or ineffective gating. A pinned photodiode (PPD)-based CIS has also been developed to realize timeresolved sensing [13], [14], [15], [16]; however, the intrinsic response and sensitivity at the near-infrared region are not sufficient for the TR-NIRS. Intrinsic response in the order of a few hundred picoseconds is desired to obtain meaningful information [17], [18].…”

Section: Introductionmentioning

confidence: 99%

A CMOS Lock-In Pixel Image Sensor With Multisimultaneous Gate for Time-Resolved Near-Infrared Spectroscopy

Lioe

Fukushi

Hakamata

et al. 2023

IEEE Trans. Electron Devices

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This article proposes a CMOS lock-in pixel image sensor aiming for time-resolved near-infrared spectroscopy (TR-NIRS). The pixel employs lateral electric field charge modulation (LEFM) with an eight-tap multisimultaneous gate structure and negative substrate bias. The optimization of pixel structure creates a high potential slope with no barrier to facilitate the high-speed photo-generated charge transfer required in the time-resolved application. The sensor employs a two-stage charge transfer architecture with pinned storage diodes (SDs). The effectiveness of the sensor is demonstrated through simulations and experimental measurements. A prototype sensor with 70 (V) × 110 (H) effective pixels to characterize the multisimultaneous gate lock-in pixel is implemented in a 0.11-µm 1-poly-4metal CMOS image sensor (CIS) technology. A fast intrinsic response of 240 ps is achieved using an 80-ps pulsewidth 780-nm laser diode by the characterization using two simultaneous gates and a single time window of the lock-in pixel.

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