CMOS device technology toward 50 nm region-performance and drain architecture

Leakage Current Characteristics of Ultra-Shallow Junctions Formed by B2H6 Plasma Doping

“…Plasma doping (PD) is considered to be a promising solution for the ultra-low energy impurity doping. Compared to the conventional ion implantation, PD has advantages such as very high throughput in the very low energy doping and compact system hardware [2][3][4][5][6]. For the activation processes, the flash-lamp annealing (FLA) will be desirable compared with the conventional spike rapid thermal annealing (RTA) from the viewpoint of high activation efficiency with suppressed dopant diffusion [7][8][9].…”

Improvement in oxide thickness uniformity by repeated spike oxidation

“…Besides temperature uniformity, the crucial issue in reduction of thermal budget during process remains. A technology called "spike," which has very short time at peak temperature, has been employed in modern studies, for both oxidation [10] and annealing [11], [12]. We present a new method called repeated spike oxidation (RSO) in this work for an RTP system.…”