CMOS gate drivers with integrated optical interfaces for extremely fast power transistors

Rouger, Nicolas; Colin, Davy; Le, Long; Crébier, Jean-Christophe

doi:10.1109/esars-itec.2016.7841366

Cited by 2 publications

(1 citation statement)

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“…The auxiliary power supply with galvanic isolation can also be established by using power-over-fibre technology [19]- [21]. Although a very low coupling capacitance can be achieved, this technology faces power transmission limitations and low efficiency.…”

Section: Introductionmentioning

confidence: 99%

Optimized Design of Multi-MHz Frequency Isolated Auxiliary Power Supply for Gate Drivers in Medium-Voltage Converters

Spro

Lefranc

Park

et al. 2020

IEEE Trans. Power Electron.

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This paper presents the design and optimisation of a suitable topology for an isolated DC-DC auxiliary power supply with high isolation voltage and low coupling capacitance. The converter consists of a GaN HEMT inverter operating at 6.78 MHz, an LCC resonance tank and a class E low dv/dt rectifier. Furthermore, the galvanic isolation is implemented using a coreless planar transformer that enables higher insulation voltage with similar or better converter efficiency compared to designs using magnetic material. An analytical design methodology is developed, however, SPICE investigations show that optimal designs might lie outside the validity of the design equations. Consequently, a virtual prototyping tool is developed based on a genetic algorithm with numerical simulations and, in turn, is used to optimise the converter. The optimisation algorithm maximises the converter efficiency while minimising the transformer size. Prototypes are constructed based on the resulting Pareto front. Experimental results show the validity of the simulated results. Prototypes transferring power up to 15 W with a peak efficiency of 81% are shown. The selected topology enables insulating voltages exceeding 40 kV and coupling capacitances below 10 pF.

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Section: Introductionmentioning

confidence: 99%