2008
DOI: 10.3390/s8042662
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CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials

Abstract: An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by re… Show more

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Cited by 51 publications
(28 citation statements)
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“…For example, combining the chemical sensitivity with the optical and semiconductor properties, polymeric carbon nitride has become an interesting candidate into the wide field of sensors [16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…For example, combining the chemical sensitivity with the optical and semiconductor properties, polymeric carbon nitride has become an interesting candidate into the wide field of sensors [16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…Tatsächlich findet man mittlerweile eine Vielfalt von Arbeiten, die die Synthese verschiedener Modifikationen und die Ausarbeitung von Zusammensetzung und Struktur von Kohlenstoffnitrid-Materialien zum Inhalt haben. [15][16][17][18][19][20][21][22][23][24][25][26][27][28] Potentielle Anwendungen in der Energieumwandlung, [29,30] Wasserstofferzeugung [31][32][33] Kohlendioxidspeicherung, [34] Reinigung von kontaminiertem Wasser, [35] in Solarzellen, [36][37][38] als Gas-und Feuchtigkeitssensor [39,40] und Vieles mehr wurden ebenfalls beschrieben. Das sogenannte g-C 3 N 4 ist das stabilste Allotrop des Kohlenstoffnitrids und findet weltweit das meiste Interesse.…”
Section: Introductionunclassified
“…Thanks to their distinctive electrical properties, not only diamond homologies, but also carbon nitrides are finding their way to microelectronics [1][2][3]. The C 3 N 4 compounds are characterized by good mechanical durability and show good resistance to adverse environmental conditions.…”
Section: Introductionmentioning
confidence: 99%