CMOS IC Fabrication Issues for High-k Gate Dielectric and Alternate Electrode Materials

Colombo, Luigi; Rotondaro, Antonio; Visokay, M.R.; Chambers, J. J.

doi:10.1007/3-540-26462-0_15

Cited by 2 publications

(2 citation statements)

References 73 publications

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“…O2) and reducing agent (e.g. H2) are present (4). Under the latter condition, SiO2 growth rates of 2.0 -5.5 nm per minute have been recorded at 1050 o C (see Fig.…”

Section: Intermediate Layermentioning

confidence: 93%

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Selected Success Stories from Twenty Years of High-k Gate Dielectric Research

Kar

2016

ECS Trans.

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This paper is a critical evaluation of six selected success stories from twenty years (1996-2016) of high-k gate dielectric research. The six success stories have been selected on the basis of their importance to MOSFET technology and the physical insight these research results have provided. The selected success stories are: (1) the realization that a quality direct interface between silicon (covalent) and high-k layer (ionic) is not possible because of bonding and coordination mismatch; hence an intermediate covalent transition layer (SiO2 or SION) is necessary to ensure a quality Si-SiO2 interface; (2) atomic layer deposition of Hf-based high-k gate dielectric; (3) realization of thermodynamically stable high-k gate stack; (4) confirmation of interface dipole at the SiO2/HfO2 interface and its technological use in controlling threshold voltage by a cap layer; (5) increase of high-k layer permittivity by phase modifiers; (6) passivation of the Ge surface and realization of Ge PMOSFET and NMOSFET with high channel mobility.

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“…O2) and reducing agent (e.g. H2) are present (4). Under the latter condition, SiO2 growth rates of 2.0 -5.5 nm per minute have been recorded at 1050 o C (see Fig.…”

Section: Intermediate Layermentioning

confidence: 93%

“…In the example illustrated, the reducing agent is hydrogen, and a balance of nitrous oxide (N 2 O) is also present. AfterColombo, Patent, 2005: Ref (4).…”

mentioning

confidence: 99%