CMOS image sensor 3T Nwell photodiode pixel SPICE model

Reiner, Thomas; Mishori, B.; Leitner, T.; Horovitz, A.; Vainbaum, Y.; Hakim, M. A.; Lahav, Assaf; Shapira, Shachar; Fenigstein, A.

doi:10.1109/eeei.2004.1361114

Cited by 6 publications

(4 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The maximum swing of the output voltage was limited by the voltage drop (0.5 V) at the PD node immediately after the reset operation. This voltage drop (reset feedthrough) is due to the ratio of the gate-to-source overlap capacitance of the RST MOSFET to the PD node capacitance, which is estimated to be about 5% assuming an SF gain value 1 [18]. The value is one order of magnitude higher than the designed value.…”

Section: Pixel Devicesmentioning

confidence: 91%

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

Meguro

Takeyama

Ohshima

et al. 2022

IEEE Electron Device Lett.

View full text Add to dashboard Cite

For radiation hardened image sensors, a Silicon-On-Insulator (SOI) -Si/ 4H-SiC hybrid pixel device was developed. The hybrid pixel device consists of one Si photodiode and three 4H-SiC nMOSFETs. At fabrication, SOI substrate was directly bonded on 4H-SiC substrate via SiO2. After bonding, the base silicon substrate and Buried Oxide (BOX) were removed by TMAH wet-etching. By using this SOI-Si/ 4H-SiC substrate, the SOI-Si photodiodes and 4H-SiC nMOSFETs were integrated in the same substrate. As a result, a response of the SOI-Si/ 4H-SiC hybrid pixel device to light illumination was successfully demonstrated.

show abstract

Section: Pixel Devicesmentioning

confidence: 91%

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

Meguro

Takeyama

Ohshima

et al. 2022

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…1 [12], [13]: each APS pixel is composed of a photodiode and three MOSFETs. Prior to the measurement, the photodiode is reverse biased up to V DD -V TH [6] by means of T1 during the reset time, which increases the depletion charge density of the junction capacitance. Next, during the integration time, T1 is switched off.…”

Section: A Architecture and Principle Of An Aps Pixelmentioning

confidence: 99%

“…APS are specific architectures that include a photodiode and a read-out in-pixel circuit to measure the intensity of light. In common SPICE simulations each element, including the photodiode, comes with its compact model and related empirical parameters, all being specific to the fabrication process [6], [7]. Based on Generalized Devices introduced in [4], it was shown that a pn junction under illumination can be physically simulated in circuit simulators (SPICEbased softwares) without any predefined model and without fitting parameters, taking into account the layout and the semiconductor technological parameters.…”

Section: Introductionmentioning

confidence: 99%

Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

Rossi

Sallèse

2020

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor with the sensing circuit. The photodiode is simulated at the physics level by means of the socalled Generalized Devices, without any predefined compact model. Conversely, regular compact models are used for MOSFETs present in the circuit. Modeling with Generalized Devices takes into account in SPICE simulations both the layout and the physics of the photodiode, i.e., drift-diffusion transport, optical generation and recombination of excess carriers, capacitive effects and surface recombination. Moreover, electrical coupling between two adjacent pixels, i.e., the electrical crosstalk, is well predicted by the network of Generalized Devices. This approach is supported by TCAD Sentaurus simulations and opens the way to full SPICE simulation of Active Pixel Sensor from the circuit down to the semiconductor level within the same circuit simulation tool.

show abstract

“…Figure 1 exhibits the overview of existing GSI pixels. Initially, three transistors (3T) combined with a photodiode (PD) formed a pixel, which is (1) Reset (RST) transistor, (2) Source Follower (SF) transistor, and (3) row select (ROW) transistor [8]. With the development of pinned photodiode (PPD) technology, a 4T GSI pixel process is developed, which can effectively inhibit Johnson-Nyquist (KTC) noise and obtain high voltage gain [9].…”

Section: Introductionmentioning

confidence: 99%

A Novel Low Dark Current 9T Global Shutter Pixel with Merged Active Area

Zhu

Chen

et al. 2023

Electronics

View full text Add to dashboard Cite

There is an increasing demand for high-performance global shutter pixels for CMOS image sensor (CIS) in the high-end imaging field. The existing global pixels have disadvantages, such as low sensitivity, high dark current, and large pixel area. In the present work, we developed a novel 9T global shutter CIS pixel with a much smaller pixel pitch of 2.8 μm. To our knowledge, it is the most miniature reported 9T global shutter CIS pixel. The developed 9T global shutter CIS pixel shows an excellent low dark current by the strategy of merging active area, which is 38 e−/s. Moreover, the cross-talk, sensitivity, read noise, dynamic range and full well capacity show performance. The current strategy is expected to be helpful in further improving the performance of other kinds of CIS pixels.

show abstract

CMOS image sensor 3T Nwell photodiode pixel SPICE model

Cited by 6 publications

References 3 publications

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

Hybrid Pixels With Si Photodiode and 4H-SiC MOSFETs Using Direct Heterogeneous Bonding Toward Radiation Hardened CMOS Image Sensors

Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

A Novel Low Dark Current 9T Global Shutter Pixel with Merged Active Area

Contact Info

Product

Resources

About