CMOS micro-heater design for direct integration of carbon nanotubes

Roy, Avisek; Ender, Ferenc; Azadmehr, Mehdi; Aasmundtveit, Knut E.

doi:10.1016/j.microrel.2017.05.031

Cited by 11 publications

(9 citation statements)

References 14 publications

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“…High thermal gradient around the micro-heaters is necessary for CMOS compatible temperature (< 300 o C) in the chip, which can mainly be accomplished by partially suspending the micro-heaters. Our simulation results support the achievability of such thermal requirements of the designed CMOS micro-heaters [8], [9]. AMS 0.35µm CMOS process has two polysilicon layers (Poly-1 & Poly-2) and uses aluminium (Al) for interconnecting metal layers [10].…”

Section: Introductionsupporting

confidence: 56%

“…Poly-2 layer has higher resistivity than Poly-1 layer. In terms of material properties, polysilicon is more suitable as a micro-heater than metal [8], [9]. Due to high electrical resistivity, polysilicon heaters can have very short length.…”

Section: B Polysilicon Micro-heatersmentioning

confidence: 99%

“…acetylene) is introduced. Details of this synthesis process can be found in one of our previous articles [8].…”

Section: Introductionmentioning

confidence: 99%

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Direct Synthesis of Carbon Nanotubes in CMOS-Layout of Micro-heaters

Roy

Azadmehr

Häfliger

et al. 2018

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

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Direct integration of Carbon Nanotubes (CNTs) in CMOS is important for commercially manufacturing low-cost CNT-based sensors. In such compact sensors, CNTs would act as sensing element, and CMOS circuits would process relevant signals from the CNTs. CNTs can be directly synthesized and integrated into CMOS by local thermal chemical vapor deposition (CVD), where a hot spot of ~ 900 o C can be generated by CMOS microheaters. However, a sufficient thermal gradient between the micro-heaters and nearest CMOS devices is a prerequisite to ensure non-destructive temperature (< 300 o C) in the electronic circuit regions. Our previous works have shown modelling and simulation of various CMOS micro-heaters that are promising for fulfilling these temperature requirements. In this paper, we investigate the layout designs of different metal and polysilicon micro-heaters using AMS 0.35µm CMOS process. Optical micrographs of the fabricated micro-heaters is also presented.

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Section: Introductionsupporting

confidence: 56%

Section: B Polysilicon Micro-heatersmentioning

confidence: 99%

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Direct Synthesis of Carbon Nanotubes in CMOS-Layout of Micro-heaters

Roy

Azadmehr

Häfliger

et al. 2018

2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)

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“…In a previous study, we showed Cu–Ni alloy to be the best-suited microheater material among other Cu alloys [42]. It should be noted from Equation (1), microheater thickness square ( t 2 ) is inversely proportion to microheater temperature, and thickness of the microheater depends on the alloy composition.…”

Section: Design Approach For Cnt Growth Structures In Cmosmentioning

confidence: 99%

“…Therefore, the dissipated electrical power in resistive heating can be converted to heat by Fourier’s law of heat conduction. We have previously derived an equation for a rectangular heater [42], where the maximum temperature ( T ) at the center can be expressed as Equation (1):T=T0+I2l2ρ8w2t2k where T 0 is ambient temperature, I is the current through the microheater, ρ is electrical resistivity, k is thermal conductivity, and l , w , and t are length, width, and thickness of the microheater, respectively.…”

Section: Design Approach For Cnt Growth Structures In Cmosmentioning

confidence: 99%

Design and Fabrication of CMOS Microstructures to Locally Synthesize Carbon Nanotubes for Gas Sensing

Roy

Azadmehr

et al. 2019

Sensors

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Carbon nanotubes (CNTs) can be grown locally on custom-designed CMOS microstructures to use them as a sensing material for manufacturing low-cost gas sensors, where CMOS readout circuits are directly integrated. Such a local CNT synthesis process using thermal chemical vapor deposition (CVD) requires temperatures near 900 °C, which is destructive for CMOS circuits. Therefore, it is necessary to ensure a high thermal gradient around the CNT growth structures to maintain CMOS-compatible temperature (below 300 °C) on the bulk part of the chip, where readout circuits are placed. This paper presents several promising designs of CNT growth microstructures and their thermomechanical analyses (by ANSYS Multiphysics software) to check the feasibility of local CNT synthesis in CMOS. Standard CMOS processes have several conductive interconnecting metal and polysilicon layers, both being suitable to serve as microheaters for local resistive heating to achieve the CNT growth temperature. Most of these microheaters need to be partially or fully suspended to produce the required thermal isolation for CMOS compatibility. Necessary CMOS post-processing steps to realize CNT growth structures are discussed. Layout designs of the microstructures, along with some of the microstructures fabricated in a standard AMS 350 nm CMOS process, are also presented in this paper.

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Application of Molecular Dynamics Simulation to Study the Transport Properties of Carbon Nanotubes‐Based Membranes

Tofighy

Mohammadi

2020

Modeling in Membranes and Membrane‐Based Processes

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CMOS micro-heater design for direct integration of carbon nanotubes

Cited by 11 publications

References 14 publications

Direct Synthesis of Carbon Nanotubes in CMOS-Layout of Micro-heaters

Direct Synthesis of Carbon Nanotubes in CMOS-Layout of Micro-heaters

Design and Fabrication of CMOS Microstructures to Locally Synthesize Carbon Nanotubes for Gas Sensing

Application of Molecular Dynamics Simulation to Study the Transport Properties of Carbon Nanotubes‐Based Membranes

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