This article presents a reconfigurable monolithic step‐up autotransformer. In addition, its reconfigurable operation has been analyzed using a proposed nonideal transformer model. A corresponding complete model for a reconfigurable autotransformer has also been developed on a silicon substrate case. The proposed reconfigurable autotransformer was fabricated using a standard 65‐nm CMOS process. The measurement results demonstrate that the fitted curves using the proposed complete model agree well with the measured results. The proposed reconfigurable autotransformer can perform the required impedance changes depending on the power amplifier output power change with low insertion loss. The 50‐Ω load impedance is transformed to a low value of 3.28 Ω in high power (HP) mode operation, and it is transformed to a high value of 12.26 Ω in low power (LP) mode operation at 0.9 GHz. The transformer insertion losses in HP and LP mode operations are −1.424 dB and −0.706 dB at 0.9 GHz, respectively. © 2015 Wiley Periodicals, Inc. Microwave Opt Technol Lett 57:1662–1666, 2015