CMOS Quadrature VCO Implemented With Two First-Harmonic Injection-Locked Oscillators

Jang, Sheng‐Lyang; Huang, Su-Shun; Lee, Chien‐Feng; Juang, Miin‐Horng

doi:10.1109/lmwc.2008.2003476

Cited by 19 publications

(7 citation statements)

References 12 publications

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“…The total tuning range was measured to be $510 MHz. Table 1 shows a comparison of the performance of the CR-QVCO in this work with those of the QVCOs (in 0.18 lm CMOS technology) in some other recent papers [6,8,9]. The performance of the proposed CR-QVCO is quite remarkable in terms of power consumption, FOM, and PFTN-factor (defined in [10]).…”

Section: Measurement Resultsmentioning

confidence: 86%

Low‐voltage/low‐power 7‐GHZ transformer‐coupled current‐reused CMOS QVCO with wide tuning range

Tseng

Huang

2010

Micro & Optical Tech Letters

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Section: Measurement Resultsmentioning

confidence: 86%

Low‐voltage/low‐power 7‐GHZ transformer‐coupled current‐reused CMOS QVCO with wide tuning range

Tseng

Huang

2010

Micro & Optical Tech Letters

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“…And the phase error is about 3.6°. Table II demonstrates the comparison of the proposed VCO and recently published papers [7][8][9][10]. As shown in Table II, this circuit has lower power consumption and better tuning range as compared with the other works.…”

Section: Discussionmentioning

confidence: 92%

A 1V wide-tuning range quadrature VCO

Kuo

Lin

2009

2009 7th International Conference on Information, Communications and Signal Processing (ICICS)

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This paper presents a low power quadrature voltagecontrolled oscillator (QVCO) with wide-tuning range. The topology of this QVCO is composed of differential Colpitts structure and back-gate coupling. The use of back-gate coupling reduces the power consumption and removes the additional noise contributions compared to conventional coupling transistor. This QVCO is designed in TSMC 0.18 µm CMOS process to cover the tuning band of 3.16~4.41GHz. With 1V voltage supply, the simulated power dissipation of the QVCO is 2.89 mW. The simulated phase noise at 1-MHz offset frequency is -108.52 dBc/Hz for 3.85 GHz.

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“…Recently divide‐by‐2 [6, 7] and first‐harmonic [8] injection‐locked oscillators (ILOs) have been used to design QVCOs. In [6] the second‐harmonic in one VCO is applied to the bodies of two metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) in the other VCO, this QVCO uses the divide‐by 2 frequency divider as the core.…”

Section: Introductionmentioning

confidence: 99%

CMOS quadrature VCO using the injection MOSFET coupling

Jang

Chiu

Chang

et al. 2011

Micro & Optical Tech Letters

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In this example, the width of guiding ridge is equal to 200 nm. Moreover, the height of the silicon, silica and gold layers are 340, 50, and 50 nm, respectively. Therefore, the total height of the guiding ridge is h ¼ 440 nm. The fundamental mode in this case is TM-like, meaning that it is the E y component that is dominant. Figure 5(b)-(d) depicts the absolute value of the electric field components corresponding to the fundamental TM mode for an operating wavelength of 1.55 lm, as obtained by the solution of the 2D eigenvalue problem. The distribution of the dominant electric field component (E y ) reveals that most of the mode energy is guided inside the 200 Â 50 nm 2 silica layer, verifying that the confinement is indeed subwavelength. Again, the hybrid nature of the mode in question is evident by noting the relative amplitude of the transverse electric-field components and the fact that both axial field components (electric and magnetic) are nonzero.Turning to the 3D-guided-wave problem, plots (b)-(d) in Figure 6 depict the absolute value of the electric-field components along the waveguide, for both the proposed and default ABCs. The length of the waveguide segment considered is L ¼ 1.2 lm, corresponding to $1.61 k g for the mode in question (k g ¼ 0.747 lm at the free-space wavelength of 1.55 lm). In addition, in Figure 6(a) the overlap integral along the waveguide is depicted. As with the previous example, the proposed ABC permits the correct excitation and absorption of the mode in question, and thus a purely guided wave is propagating in the structure. On the other hand, when the default ABCs are used, a standing wave pattern is formed, owing to reflections from the two ports. One might also notice that when the standard ABCs are used, both transverse electric field components are excited with higher amplitudes than dictated by the solution of the 2D eigenvalue problem. This is because at the cross-sectional points associated with their peak value, g 0 /n eff is smaller than both Z TM w and Z TE w . On the contrary, in the previous example of a silicon wire waveguide, E x is excited with a lower amplitude, as g 0 /n eff > Z TE w at the respective cross-sectional point. Finally, let us note that the slight negative slope evident in the field component and overlap integral plots is because of propagation (resistive) losses. Specifically, for the waveguide dimensions considered, the propagation length, that is, the distance at which the optical intensity has dropped by a factor of e À1 , is $23 lm. CONCLUSION

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CMOS Quadrature VCO Implemented With Two First-Harmonic Injection-Locked Oscillators

Cited by 19 publications

References 12 publications

Low‐voltage/low‐power 7‐GHZ transformer‐coupled current‐reused CMOS QVCO with wide tuning range

Low‐voltage/low‐power 7‐GHZ transformer‐coupled current‐reused CMOS QVCO with wide tuning range

A 1V wide-tuning range quadrature VCO

CMOS quadrature VCO using the injection MOSFET coupling

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