CMOS single-ended-to-differential low-noise amplifier

Carrillo, Tomás Carrasco; Macias-Montero, Jose Gabriel; Martí, Aitor Osorio; Córdoba, Javier Sieiro; López-Villegas, J.M.

doi:10.1016/j.vlsi.2008.11.003

Cited by 7 publications

(4 citation statements)

References 15 publications

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“…Their design features an active feedback path and thus results in larger power dissipation. To reduce power consumption, Carrillo et al presented a single-ended to differential LNA design by replacing active loads and current mirrors by optimized inductors and transformers [85], using the folded cascode topology.…”

Section: Wideband Lna Designmentioning

confidence: 99%

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Li¹,

Zhang²

2018

PIER

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This paper reviews recent advances in the design of low noise amplifier (LNA) in complementary metal oxide semiconductor (CMOS) technology for radio transceivers at microwave and millimeter wave (mmWave) frequencies. First, the evolution of wireless communication systems and CMOS technology are briefly revisited to highlight the requirements of an LNA design. Then, key performance parameters and device circuit models are described. Next, we discuss typical LNA topologies, followed by those important design techniques, algorithms and concepts developed specifically for CMOS LNAs. Moreover, reported CMOS LNA designs are summarized, and future design issues are identified. Finally, we conclude the paper and briefly outline our future work on CMOS LNA designs.

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Section: Wideband Lna Designmentioning

confidence: 99%

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Li¹,

Zhang²

2018

PIER

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“…Otherwise, the ingoing waves are different at each port, and such difference depends on S cc and S cd which convey a common-mode conversion. Now, by means of (20), the voltage and currents at each node of the DUT can be rewritten as a function of a 1 as (22) where in (21) the upper and lower signs hold for port 1 and port 2, respectively. As a matter of fact, only when the two-port device is symmetric, (21) …”

Section: Mixed-mode Driving Conditionsmentioning

confidence: 99%

“…However, this definition is quite subtle because the stored energy is actually dependent on the shape of electromagnetic fields around the component. These fields are related to the geometry, including layout elements nearby; but, most important, to the way in which the inductor is excited in [21][22][23]. Noticing the benefit of exciting inductors differentially, Rabjohn introduced the use of symmetrical shapes in the implementation of fully differential RFICs substituting traditional spiral ones [24,25].…”

Section: Practical Casementioning

confidence: 99%

Mixed-Mode Impedance and Reflection Coefficient of Two-Port Devices

Carrasco¹,

Sieiro²,

López-Villegas³

et al. 2012

PIER

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Abstract-From the point of view of mixed-mode scattering parameters, S mm , a two-port device can be excited using different driving conditions. Each condition leads to a particular set of input reflection and input impedance coefficient definitions that should be carefully applied depending on the type of excitation and symmetry of the two-port device. Therefore, the aim of this paper is to explain the general analytic procedure for the evaluation of such reflection and impedance coefficients in terms of mixed-mode scattering parameters. Moreover, the driving of a two-port device as a one-port device is explained as a particular case of a two-port mixed-mode excitation using a given set of mixed-mode loads. The theory is applied to the evaluation of the quality factor, Q, of symmetrical and nonsymmetrical inductors.

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“…Low noise amplifiers (LNA) are one of the key components in receivers because it tends to dominate the sensitivity and noise figure (NF) of the whole system (Carrillo et al, 2009). .…”

Section: Introductionmentioning

confidence: 99%

Suppression of Microwave High-Speed Circuit Noise by Using a 10 GHz Transimpedance Amplifier at 30 oC

Ahmad¹

2012

RJS

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A 10 GHz low noise transimpedance amplifier (TIA) is designed in which a new highspeed Angelov transistor model was employed. Thermal circuit components were simulated for noise measurement at 30ºC at which a typical microwave noise of 20 pA/√Hz was applied as the TIA input. A form of feedback topology helped to reduce the minimum noise figure to 3 dB, while the |S 21 | parameter gain proved to be 21.7 dB. A noise voltage at the TIA output was 3.23 x 10-15 V 2 /Hz. The designed circuit showed a stability factor value of 0.36 which is considered as conditionally stable.

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CMOS single-ended-to-differential low-noise amplifier

Cited by 7 publications

References 15 publications

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Cmos Low Noise Amplifier Design for Microwave and Mmwave Applications (Invited Review)

Mixed-Mode Impedance and Reflection Coefficient of Two-Port Devices

Suppression of Microwave High-Speed Circuit Noise by Using a 10 GHz Transimpedance Amplifier at 30 oC

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