CMP CoO reduction: slurry reprocessing

Bibby, T.; Adams, J.A.S.; Holland, Karey; Krulik, G. A.; Parikh, Paul

doi:10.1016/s0040-6090(97)00496-3

Cited by 20 publications

(14 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…11 A selection of polyurethane polishing pads 300 mm in diameter ͑12 in.͒ was used along with Cabot Microelectronic's Cabo-sil SC-1 oxide polishing slurry with 100 nm fumed silica abrasive particles. 4 Slurry flow visualization was achieved using tracer particles that were added to the slurry to allow optical tracking of the fluid motion. Pepper particles were used as tracers because they are inexpensive, easy to work with, environmentally benign, and can be imaged under ambient light.…”

Section: Methodsmentioning

confidence: 99%

In Situ Investigation of Slurry Flow Fields during CMP

Mueller

Rogers

Manno

et al. 2009

J. Electrochem. Soc.

View full text Add to dashboard Cite

The objective of this work is to obtain in situ slurry fluid flow data during the chemical mechanical planarization ͑CMP͒ process. Slurry flow affects the material removal processes, the creation of defects, and consumable use during CMP, and therefore impacts the cost and quality of polishing. Wafer-scale flow visualization using seeded slurry was accomplished for a variable applied load ͑0.3-2.5 psi downforce͒, wafer rotation speed ͑0 and 33 rpm͒, slurry injection locations, and various pad types ͑flat, XY grooved, and AC grooved͒. In situ pad conditioning was employed in all experiments. The data indicated complex slurry flow fields on the pad surface in the wafer vicinity, which are influenced by slurry injection point, pad grooving, downforce, and wafer/conditioner rotation. Injection location and pad type were shown to have the strongest impact on the variation in the fluid flow fields obtained.The semiconductor industry relies heavily on chemical mechanical planarization ͑CMP͒ to create planar surfaces on silicon substrates during the integrated circuit ͑IC͒ manufacturing process. As the IC feature size continues to shrink, the need to create surfaces with micrometer-level global planarity is of utmost importance. 1-4 CMP is a complex, multimechanism process 1 in which the material removal mechanisms are not well characterized, 5 leading to a high reliance on indirect empirical data. 6 In situ data acquisition during CMP is difficult due to concurrent processes, complex geometries, and the combined opaque nature of the pads, wafers, and slurry during polish. In most cases, CMP data are gathered ex situ or obtained from oversimplified systems that may not fully represent industrially relevant polishing conditions. Mechanistic models have been developed to explain the phenomena, 3,6-9 but there are only limited empirical data available to test these models. The polishing parameters and their effect on polish quality, which is influenced by fluid transport and polishing components, must be better understood to advance the state of the art in CMP. 1,3,9 The slurry velocity flow fields at the wafer-slurry-pad interface have not yet been fully characterized and a repeatable and reliable method to measure these polishing indicators is lacking. 10 We present data from two flow characterization approaches in this paper: qualitative flow visualization and slurry velocity measurement using particle image velocimetry ͑PIV͒. ExperimentalA photograph of the polisher utilized in this work is presented in Fig. 1. The primary component is a modified half-scale Stuers RotoPol-31 CMP industrial polisher that is surrounded by an 80/20 aluminum frame. The polishing system sits atop a 136 kg solid steel isolation table. Optically clear BK-7 glass wafers 75 mm in diameter ͑3 in.͒ and 12.5 mm thick ͑0.5 in.͒ were rotated and loaded with downforce through the centrally located aluminum shaft driven by a 0.2 hp Dayton motor. A transparent glass wafer was used as a surrogate for a silicon wafer because it has similar polishing chara...

show abstract

Section: Methodsmentioning

confidence: 99%

In Situ Investigation of Slurry Flow Fields during CMP

Mueller

Rogers

Manno

et al. 2009

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…The control of those additions does not consider the concentration variations of the collected slurry involving concentration variations of retreated slurry. Bibby et al show that results are similar to those obtained with the slurry of reference with a saving of slurry at about 80% [1]. These different methods are applied for the oxide slurry with vast specifications on CMP parameters, in particular concerning defectivity.…”

Section: Introductionmentioning

confidence: 91%

“…The purpose of CMP (Chemical and Mechanical Polishing) is to transform the wafer surface to be polished by a chemical action, then to remove this modified layer by a mechanical action [1,2]. The cost of this process is determined by the cost of consumables [3,4] particularly the polish liquid, the slurry [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Retreatment of silicon slurry by membrane processes

Testa

Coetsier

Carretier

et al. 2011

Journal of Hazardous Materials

View full text Add to dashboard Cite

“…[13][14][15] Several studies have been performed in analyzing the polishing residue after polishing. 16,18,20,21 Han et al studied the effect of polishing by products on copper CMP behavior. 17 Other researchers have studied the use of polishing residue to reuse the slurry in the CMP process by analyzing the variation in particle size after polishing.…”

mentioning

confidence: 99%

Generation of Pad Debris during Oxide CMP Process and Its Role in Scratch Formation

Prasad¹,

Kwon²,

Kim³

et al. 2011

J. Electrochem. Soc.

View full text Add to dashboard Cite

The generation of pad debris during the chemical mechanical planarization (CMP) process was studied. A fresh pad was conditioned with deionized water alone without polishing any wafer in order to characterize the pad debris exclusively. It was found that the pad debris presented in several size ranges with irregular shapes, mostly in agglomerated form. Polishing experiments were performed continuously without conditioning the pad, and the byproducts were gathered several times during the process. No pad debris was found in the gathered slurry during this process, but dispersion of some agglomerated silica particles was observed. The slurry was gathered during CMP processes conducted under both in situ and ex situ pad conditions. The generation of pad debris during polishing was observed with in situ conditioning but not observed with ex situ conditioning. The effect of the presence of pad debris on scratch formation was also studied, and it was found that the occurrence of pad debris seriously increased the number of scratches. An increase in the number of diamonds per unit area of a conditioner could ultimately avoid the generation of pad debris, eventually reducing the scratch formation by sustaining the same removal rate and nonuniformity after the CMP process.

show abstract

CMP CoO reduction: slurry reprocessing

Cited by 20 publications

References 0 publications

In Situ Investigation of Slurry Flow Fields during CMP

In Situ Investigation of Slurry Flow Fields during CMP

Retreatment of silicon slurry by membrane processes

Generation of Pad Debris during Oxide CMP Process and Its Role in Scratch Formation

Contact Info

Product

Resources

About