CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications

Chang, T. C.; Tsai, Tzu-I; Liu, Po–Tsun; Chen, C. W.; Yan, S. T.; Aoki, Hidemitsu; Chang, Yanhe; Tseng, Tseung‐Yuen

doi:10.1016/j.tsf.2003.07.028

Cited by 13 publications

(10 citation statements)

References 9 publications

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“…Dong-Pyo et al [7] investigated the etching behaviour of Bi 4−x La x Ti 3 O 12 (BLT) films in inductively coupled Ar/Cl 2 plasma in terms of etch parameters. They found that the etching rate as a function of mixing ratio showed a maximum of 50.3 nm min −1 for a mixture of 80% Ar and 20% Cl 2 and that the increase of source power or substrate bias caused an increase in BLT etch rate under any fixed gas composition.…”

Section: Introductionmentioning

confidence: 99%

Simulation of an Ar/Cl₂inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments

Tinck¹,

Boullart²,

Bogaerts³

2008

J. Phys. D: Appl. Phys.

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A hybrid model, called the hybrid plasma equipment model, was used to study Ar/Cl2 inductively coupled plasmas used for the etching of Si. The effects of substrate bias, source power and gas pressure on the plasma characteristics and on the fluxes and energies of plasma species bombarding the substrate were observed. A comparison with experimentally measured etch rates was made to investigate how the etch process is influenced and which plasma species mainly account for the etch process. First, the general plasma characteristics are investigated at the following operating conditions: 10% Ar 90% Cl2 gas mixture, 5 mTorr total gas pressure, 100 sccm gas flow rate, 250 W source power, −200 V dc bias at the substrate electrode and an operating frequency of 13.56 MHz applied to the coil and to the substrate electrode. Subsequently, the pressure is varied from 5 to 80 mTorr, the substrate bias from −100 to −300 V and the source power from 250 to 1000 W. Increasing the total gas pressure results in a decrease of the etch rate and a less anisotropic flux to the substrate due to more collisions of the ions in the sheath. Increasing the substrate bias has an effect on the energy of the ions bombarding the substrate and to a lesser extent on the magnitude of the ion flux. When source power is increased, it was found that, not the energy, but the magnitude of the ion flux is increased. The etch rate was more influenced by a variation of the substrate bias than by a variation of the source power, at these operating conditions. These results suggest that the etch process is mainly affected by the energy of the ions bombarding the substrate and the magnitude of the ion flux, and to a lesser extent by the magnitude of the radical flux.

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Section: Introductionmentioning

confidence: 99%

Simulation of an Ar/Cl₂inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments

Tinck¹,

Boullart²,

Bogaerts³

2008

J. Phys. D: Appl. Phys.

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“…The fabrication process for PPSZ films can be divided into 3 steps. 5) First, PPSZ precursors are spun on Si substrates at 2000 rpm for 30 s by a spin coater. This followed by softbaking steps at 150 and 280 C for 3 min to remove solvent.…”

Section: Fabrication and Properties Of Ppsz Filmsmentioning

confidence: 99%

“…During the hydration step, there are two mechanisms, hydrolysis and condensatio, by which the polymer structure is transformed into porous MSQ. 4,5) Various hydration times can be used to change the porosities of PPSZ films. Subsequently, the wafers are cured in a quartz furnace at 400 C for 30 min with N 2 purging.…”

Section: Fabrication and Properties Of Ppsz Filmsmentioning

confidence: 99%

“…1,2) Recently, ultralow-dielectric-constant (K < 2:0) porous materials have received much attention as next-generation dielectric materials. [3][4][5] In addition to the fabrication of electrical devices, stateof-the-art semiconductor technologies are also useful for applications in integrated optical devices. The fabrication process for optical integrated circuits primarily follows those in semiconductor technology.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications

Chen

Hsieh

Cheng

et al. 2005

Jpn. J. Appl. Phys.

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We apply canonical Poisson-Lie T-duality transformations to bosonic open string worldsheet boundary conditions, showing that the form of these conditions is invariant at the classical level, and therefore they are compatible with Poisson-Lie T-duality. In particular the conditions for conformal invariance are automatically preserved, rendering also the dual model conformal. The boundary conditions are defined in terms of a gluing matrix which encodes the properties of D-branes, and we derive the duality map for this matrix. We demonstrate explicitly the implications of this map for D-branes in two non-Abelian Drinfel'd doubles.

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“…On the other hand, as device nodes progress and the number of applications of CMP in semiconductor device manufacturing increases, defect control is becoming another key factor in CMP. [13][14][15] From this viewpoint, the development of a low-k Cu interconnect process is a challenge because low-k films 16,17) are fragile and easily peel off especially at the wafer edge portion. 18) Therefore, wafer edge pressure control by adjusting the retainer ring pressure is also considered important for preventing low-k film delamination.…”

Section: Introductionmentioning

confidence: 99%

New Model of Defect Formation Caused by Retainer Ring in Chemical Mechanical Polishing

Isobe

Komiyama

Kurokawa

2013

Jpn. J. Appl. Phys.

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Defect formation by retainer ring pressure in chemical mechanical polishing (CMP) was investigated. It was found that a higher retainer ring pressure causes more defects. The mechanism underlying this finding was considered to be the agglomeration of abrasive particles mixed with polished polymers from the retainer ring. Such agglomeration is accelerated by increasing the retainer ring pressure. This ring pressure exerts stress onto particles and also polishes the polymers from the ring. Lowering the retainer ring pressure and also changing the ring material from polymers, which are easy to polish, to tough materials are effective for minimizing the density of defects in CMP.

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CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications

Cited by 13 publications

References 9 publications

Simulation of an Ar/Cl₂inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments

Simulation of an Ar/Cl₂inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments

Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications

New Model of Defect Formation Caused by Retainer Ring in Chemical Mechanical Polishing

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CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications

Cited by 13 publications

References 9 publications

Simulation of an Ar/Cl2inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments

Simulation of an Ar/Cl2inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments

Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications

New Model of Defect Formation Caused by Retainer Ring in Chemical Mechanical Polishing

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Product

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Simulation of an Ar/Cl₂inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments

Simulation of an Ar/Cl₂inductively coupled plasma: study of the effect of bias, power and pressure and comparison with experiments