CMR films structure as a function of growth and processing

Hawley, M. E.; Adams, Charles C.; Arendt, P. N.; Brosha, Eric L.; Garzón, Fernando H.; Houlton, R. J.; Hundley, M. F.; Heffner, R. H.; Jia, Q. X.; Neumeier, J. J.; Wu, Xin

doi:10.1016/s0022-0248(96)01142-6

Cited by 22 publications

(16 citation statements)

References 10 publications

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“…This observation is consistent with previous reports. 13,14 While both transition temperatures and strain states exhibit strong thickness dependence as mentioned above, they do not show clear correlation with each other ͑see Table I͒. It is believed that a lattice compression ͑a negative ⑀ B ) will reduce electron-phonon interactions and increase the elec-tronic hopping amplitude by decreasing the Mn-O bond length while increasing the Mn-O-Mn bond angle, 15,16 all leading to a T c increase.…”

mentioning

confidence: 94%

Three-dimensional strain states and crystallographic domain structures of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 thin films

Rao

Lavric

Nath

et al. 1998

Applied Physics Letters

213

128

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Articles you may be interested inCurrent-sensitive electroresistance and the response to a magnetic field in La 0.8 Ca 0.2 MnO 3 epitaxial thin films J. Appl. Phys. 97, 10H706 (2005); 10.1063/1.1847092 Effects of film thickness and lattice mismatch on strain states and magnetic properties of La 0.8 Ca 0.2 MnO 3 thin filmsThe evolution of three-dimensional strain states and crystallographic domain structures of epitaxial colossal magnetoresistive La 0.8 Ca 0.2 MnO 3 films have been studied as a function of film thickness and lattice mismatch with two types of ͑001͒ substrates, SrTiO 3 and LaAlO 3 . In-plane and out-of-plane lattice parameters and strain states of the films were measured directly using normal and grazing incidence x-ray diffraction techniques. The unit cell volume of the films is not conserved, and it exhibits a substrate-dependent variation with film thickness. Films grown on SrTiO 3 substrates with thickness up to ϳ250 Å are strained coherently with a pure (001) T orientation normal to the surface. In contrast, films as thin as 100 Å grown on LaAlO 3 show partial relaxation with a (110) T texture. While thinner films have smoother surfaces and higher crystalline quality, strain relaxation in thicker films leads to mixed (001) T and (110) T textures, mosaic spread, and surface roughening. The magnetic and electrical transport properties, particularly Curie and peak resistivity temperatures, also show systematic variations with respect to film thickness.

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mentioning

confidence: 94%

Three-dimensional strain states and crystallographic domain structures of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 thin films

Rao

Lavric

Nath

et al. 1998

Applied Physics Letters

213

128

View full text Add to dashboard Cite

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“…This increase in the value of EA is mainly due to the strain relaxation. In fact the 60 nm thick film is more relaxed, in comparison with the 40 nm thick film, however its activation energy is still relatively small in comparison with that of the bulk LCMO (EA,bulk~115 meV) [31,32]. b) Variable range hopping (VRH) Model Fig.…”

Section: A) Small -Polaron Modelmentioning

confidence: 99%

Strain dependence of the physical properties of epitaxial La0.7Ca0.3MnO3 thin films grown on LaAlO3 substrates

Helali

Daoudi

Boudard

et al. 2016

Journal of Alloys and Compounds

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“…This observation is consistent with previous reports. [19], [20] Figure 3(a) shows the variation in Tp with film thickness for LCMO (x=0.33) films on both substrates. The Tc and TP of the films of both compositions increase with increasing film thickness, while p 0 decreases.…”

Section: Electrical Transport and Magnetic Propertiesmentioning

confidence: 99%

Strain Inhomogeneity in Epitaxial Colossal Magnetoresistive La_1-xCa_xMnO₃ Thin Films

et al. 1999

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The strain inhomogeneity and crystallographic domain structures and their influence on the electrical transport and magnetic properties of epitaxial colossal magnetoresistive La,.xCaxMnO 3 (x = 0.2, 0.33) films have been studied as a function of film thickness and two types of (001) substrates, SrTiO 3 and LaAI03. Out-of-plane and in-plane lattice parameters were determined using normal and grazing incidence x-ray diffraction (GID), and least-squares fits of off-axis x-ray reflections. The lattice strain near the film surface as determined by GID appears to relax faster than that at the film interior as determined by the least-squares fit, indicating the presence of strain inhomogeneity in the films. The observed strain inhomogeneity appears to influence the magnetic and electrical transport properties. In particular the measured temperature dependent magnetization exhibits multiple transitions indicating a variation of Curie temperatures within the same sample. While the very thin films exhibit single out-of-plane domains, accompanied by a high crystalline coherence and smooth surfaces, strain relaxation in thicker films leads to mixed ( 0 0 1 )T and (1 10)T textures, and increased mosaic spread and surface roughness. The films also exhibit electrically insulating "dead" layers about 100 -200A thick.

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CMR films structure as a function of growth and processing

Cited by 22 publications

References 10 publications

Three-dimensional strain states and crystallographic domain structures of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 thin films

Three-dimensional strain states and crystallographic domain structures of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 thin films

Strain dependence of the physical properties of epitaxial La0.7Ca0.3MnO3 thin films grown on LaAlO3 substrates

Strain Inhomogeneity in Epitaxial Colossal Magnetoresistive La_1-xCa_xMnO₃ Thin Films

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CMR films structure as a function of growth and processing

Cited by 22 publications

References 10 publications

Three-dimensional strain states and crystallographic domain structures of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 thin films

Three-dimensional strain states and crystallographic domain structures of epitaxial colossal magnetoresistive La0.8Ca0.2MnO3 thin films

Strain dependence of the physical properties of epitaxial La0.7Ca0.3MnO3 thin films grown on LaAlO3 substrates

Strain Inhomogeneity in Epitaxial Colossal Magnetoresistive La1-xCaxMnO3 Thin Films

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Strain Inhomogeneity in Epitaxial Colossal Magnetoresistive La_1-xCa_xMnO₃ Thin Films