CNTFET Technology for RF Applications: Review and Future Perspective

Hartmann, Martin; Hermann, Sascha; Marsh, P.F.; Rutherglen, Christopher; Wang, Dawei; Ding, Li; Peng, Lian‐Mao; Claus, Martin; Schröter, M.

doi:10.1109/jmw.2020.3033781

Cited by 31 publications

(12 citation statements)

References 124 publications

(147 reference statements)

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“…Single-tube and single-wire FETs have been useful to understand the corresponding device physics 1,2 . Transistors with an array of CNTs or NWs as channel have been demonstrated to be suitable candidates for practical low-power high-performance applications [3][4][5][6] . The latter has been boosted by sophisticated techniques developed towards the integration of 1D-arrays-based devices in industry fabrication processes [7][8][9][10] .…”

Section: Introductionmentioning

confidence: 99%

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

Pacheco‐Sanchez

Torrent

Jiménez

2022

Journal of Applied Physics

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The potential barrier height at the interface formed by a metal contact and multiple one-dimensional (1D) quasi-ballistic channels in field-effect transistors is evaluated across different carbon nanotube and nanowire device technologies by means of a Landauer–Büttiker-based extraction methodology (LBM) adapted for multiple 1D-channels. The extraction methodology yields values for an effective Schottky barrier height and a gate coupling coefficient, an indicator of the device working at the quantum capacitance limit. The novel LBM-based approach embracing the mechanisms in 1D electronics is compared to the conventional activation energy method not considering such effects. The latter approach underestimates the potential barrier height at metal–channel interfaces in comparison to the novel methodology. A test structure based on a displaced gate device is proposed based on numerical device simulation results toward an improved accuracy of the method.

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Section: Introductionmentioning

confidence: 99%

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

Pacheco‐Sanchez

Torrent

Jiménez

2022

Journal of Applied Physics

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“…The RF performance of carbon nanotube field effect transistors (CNTFETs) have been studied at both the device and circuit level [1]- [3] due to their outstanding material properties such as: carrier mobility, high current carrying capacity [4], low power dissipation and low thermal noise [5], [6]. The inherent properties of CNTs enable transistors with a low leakage current, higher power gain and low noise level [6].…”

Section: Introductionmentioning

confidence: 99%

“…The inherent properties of CNTs enable transistors with a low leakage current, higher power gain and low noise level [6]. Such characteristics make CNTFETs to be considered attractive candidates to compete with incumbent technologies in low-power high-frequency applications [3].…”

Section: Introductionmentioning

confidence: 99%

“…In the design of CNTFETs, challenges such as targeting high semiconductor purity greater than 99% [12] and the assembly of nanotubes in aligned arrays [13] have been overcome. The improvement in manufacturing processes continue in order to exploit the well-defined and broad linear and non-linear bias regions of CNTFETs [3] which are extremely desirable in analog RF devices.…”

Section: Introductionmentioning

confidence: 99%

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A CNTFET-based Mixer Design for 5G Communications

Villavicencio-Avila

Pacheco‐Sanchez

Rodriguez-Mendez

et al. 2022

Preprint

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This article presents the design of high-frequencydown-conversion mixers using a carbon nanotube fieldeffecttransistor (CNTFET). An experimentally-calibrated semiphysicalcompact model for high-frequency CNTFET technologieshas been used. The designed mixer is proposed using atopology composed of a 90º hybrid coupler at a frequencyof 25 GHz with a coupling factor of 3 dB, a CNTFET andmicrostrip-based coupling networks. The mixer operates in theupper band for 5G communications.The RF signal is used at afrequency of 25 GHz for an intermediate frequency conversion(IF) of 1 GHz using a LO of frequency 24 GHz. The designyields a conversion gain of 20 dB whereas the RF/LO isolationis -18.9 dBm and the LO/IF isolation is -25.6 dBm with ananotube density of 40 CNT/μm. By increasing the densityof nanotubes to 100 CNT/ μm, the conversion gain and portisolation RF/LO figures of merit improve to 26 dB and -20.7dB, respectively. The mixer consumes 9.52 μW from a -1.5 V supply.

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“…Carbon nanotubes (CNTs) have emerged as one of the options to replace the silicon (Si)-based channel of novel field-effect transistors (FETs) in high-performance applications beyond the limits of conventional technologies [1], [2] while improving further the device footprint and fabrication costs of related circuits [3]. The quasi-ballistic transport, an outstanding gate control over the channel, as well as an inherent device linearity associated to CNTFETs, makes them suitable for low-power high-frequency (HF) applications [2], [4], [5] as recently demonstrated by devices operating at frequencies of around 100 GHz [6]- [8]. One feature of carbon-based FETs is their ambipolar behavior [9]- [12], i.e., the device performance in the active region can be of n-type-like or p-type-like according to the bias.…”

Section: Introductionmentioning

confidence: 99%

Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

Ramos-Silva,

Pacheco-Sanchez,

Ramirez-Garcia

et al. 2021

Preprint

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An experimentally-calibrated carbon nanotube compact transistor model has been used here to design two high-frequency (HF) circuits with two different functionalities each: a phase configurable amplifier (PCA) and a frequency configurable amplifier (FCA). The former design involves an in-phase amplifier and an inverting amplifier while the latter design embraces a frequency doubler as well as a distinct inverting amplifier. The specific functionality selection of each of the two HF circuit designs is enabled mainly by the inherent ambipolar feature at a device level. Furthermore, at a circuit level the matching networks are the same regardless the operation mode. In-phase and inverting amplification are enabled in the PCA by switching the gate-to-source voltage (VGS) from −0.3 V to 0.9 V while the drain-to-source voltage (VDS) remains at 3 V. By designing carefully the matching and stability networks, power gains of ∼4.5 dB and ∼6.7 dB at 2.4 GHz for the in-phase and inverting operation mode have been achieved, respectively. The FCA, in its frequency doubler operation mode, exhibits ∼20 dBc of fundamental-harmonic suppression at 2.4 GHz when an input signal at 1.2 GHz is considered. This frequency doubler functionality is enabled at VGS = 0.3 V, whereas at VGS = 0.9 V amplification of ∼4.5 dB is obtained while VDS remains at 3 V in both cases. In both configurable circuits the stabilization and matching networks are the same regardless the bias-chosen operation mode. The circuits performance degradation due to metallic tubes in the device channel is studied as well as the impact of non-ideal inductors in each design. PCA and FCA operation modes are further exploited in high-frequency modulators.

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CNTFET Technology for RF Applications: Review and Future Perspective

Cited by 31 publications

References 124 publications

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

Schottky-like barrier characterization of field-effect transistors with multiple quasi-ballistic channels

A CNTFET-based Mixer Design for 5G Communications

Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs

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