Co-catalytic mechanism of Au and Ag in silicon etching to fabricate novel nanostructures

Li, Ruike; Li, Meicheng; Li, Yingfeng; Fu, Pengfei; Luo, Younan; Huang, Rui; Song, Dandan; Mbengue, Joseph Michel

doi:10.1039/c5ra19032k

Cited by 12 publications

(4 citation statements)

References 36 publications

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“…1,12 Non-lithographic methods use various ways to depose catalytic metal into the form of a discontinuous layer, islands 7,8,10,13 or particles from a colloidal suspension. [14][15][16][17] Density of particles, islands and cracks in a metal layer determines whether the obtained structures are more like porous material or nanowires. Other non-lithographic methods may include the use of sample preparation to fabricate a pattern that acts as a shadow mask before a catalytic layer deposition like self-organizing polystyrene spheres [18][19][20][21] or imprinting technique.…”

Section: Introductionmentioning

confidence: 99%

Nanostructuring of Si substrates by a metal-assisted chemical etching and dewetting process

et al. 2018

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Section: Introductionmentioning

confidence: 99%

Nanostructuring of Si substrates by a metal-assisted chemical etching and dewetting process

et al. 2018

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“…It is nowadays widely used to generate dense, high aspect ratio silicon nanostructures with vertical sidewalls due to its independence of crystal orientation, large area, simplicity, low cost, versatility and reproducibility. To date, MacEtch has been successfully used to prepare various types of nanostructures, including nanopillars [9,10], nanoholes [11], nanogrooves [12] and other bulk Si structures [13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of ultra-high aspect ratio (>160:1) silicon nanostructures by using Au metal assisted chemical etching

Shi

et al. 2017

J. Micromech. Microeng.

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We present a facile and effective approach for fabricating high aspect ratio, dense and vertical silicon nanopillar arrays, using a combination of metal etching following electron-beam lithography and Au metal assisted chemical etching (MacEtch). Ti/Au nanostructures used as catalysts in MacEtch are formed by single layer resist-based electron-beam exposure followed by ion beam etching. The effects of MacEtch process parameters, including half period, etching time, the concentrations of H2O2 and HF, etching temperature and drying method are systematically investigated. Especially, we demonstrate an enhancement of etching quality by employing cold MacEtch process, and an enhancement in preventing the collapse of high aspect ratio nanostructures by employing low surface tension rinse liquid and natural evaporation in the drying stage. Using an optimized MacEtch process, vertical silicon nanopillar arrays with a period of 250 nm and aspect ratio up to 160:1 are realized. Our results should be instructive for exploring the achievable aspect ratio limit in silicon nanostructures and may find potential applications in photovoltaic devices, thermoelectric devices and x-ray diffractive optics.

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“…For the preparation by design of a desirable catalytic metal pattern, lithographic methods are used [88,89]. In the case of non-lithographic methods, various approaches for catalytic metal deposition in the form of a discontinuous layer, islands [90][91][92][93][94] or particles from a colloidal suspension are used [95][96][97][98]. Varying the density of particles, islands and cracks of the deposited metal layer determines whether the obtained structures represent porous-like material or nanowires.…”

Section: Electrolyte Usedmentioning

confidence: 99%

Porous semiconductor compounds

Monaico

Tiginyanu

Ursaki

2020

Semicond. Sci. Technol.

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In this review paper, we present a comparative analysis of the electrochemical dissolution of III-V (InP, GaAs, GaN), II-VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed, including those of porous layers and networks of low-dimensional structures such as nanowires, nanobelts, and nanomembranes. Self-organized phenomena in anodic etching are disclosed, leading to the formation of controlled porous patterns and quasi-ordered distribution of pores. Results of templated electrochemical deposition of metal nanowires, nanotubes and nanodots are summarized. Porosification of some compounds is shown to improve luminescence characteristics as well as to enhance photoconductivity, second harmonic generation and Terahertz emission. Possible applications of porous semiconductor compounds in various areas are discussed.

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Co-catalytic mechanism of Au and Ag in silicon etching to fabricate novel nanostructures

Abstract: The co-catalytic mechanism of silicon etching with a bilayer Au and Ag nanofilm is revealed, resulting in two very different structures.

Cited by 12 publications

References 36 publications

Nanostructuring of Si substrates by a metal-assisted chemical etching and dewetting process

Nanostructuring of Si substrates by a metal-assisted chemical etching and dewetting process

Fabrication of ultra-high aspect ratio (>160:1) silicon nanostructures by using Au metal assisted chemical etching

Porous semiconductor compounds

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