Keywords: nanomaterials, carbon nanotubes, photothermal chemical vapor deposition, low temperature growth 2 For carbon nanotubes (CNTs) to be exploited in electronic applications the growth of high quality material on conductive substrates at low temperatures (< 450 o C) is required. CNT quality is known to be strongly degraded when growth is conducted on metallic surface at low temperatures using conventional chemical vapor deposition (CVD). Here, we demonstrate production of high quality vertically-aligned CNTs at low substrate temperatures (350 -440 o C) on conductive TiN thin film using photo-thermal CVD by confining the heat required for growth to just the catalyst using an array of optical lamps and by optimizing the thickness of the TiN under-layer. The thickness of the TiN plays a crucial role in determining various properties including diameter, material quality, number of shells and metallicity. The highest structural quality with a visible Raman D-to G-band intensity ratio as low as 0.13 is achieved for 100 nm TiN thickness grown at 420 o C; a record low value for low temperature CVD grown CNTs. Electrical measurements of high density CNT arrays show the resistivity to be 1.25×10 -2 Ωcm represents some of the lowest values reported. Finally, the broader aspects of using this approach as a scalable technology for carbon nanomaterial production are also discussed.3