2024
DOI: 10.1016/j.ijhydene.2023.08.038
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Co₃O₄/g-C₃N₄ nanocomposite for enriched electrochemical water splitting

P. Mohana,
S. Swathi,
R. Yuvakkumar
et al.
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Cited by 5 publications
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“…The nitrogen atoms in g-C 3 N 4 have a lone pair of electrons and can change the electron configuration of the supported materials by interfacial charge redistribution. Studies on the Co 3 O 4 /g-C 3 N 4 nanocomposite [94] and g-C 3 N 4 /Co 3 O 4 /α-Fe 2 O 3 [95] have proved that a strong coupling interaction is formed at the interface between the g-C 3 N 4 and the oxide, which acts as an effective electron transport channel and exposes more catalytically active sites, leading to outstanding OER performances with η 20 values of 170 and 359 mV and Tafel values of 188 and 116 mV dec −1 , respectively. Following the synthesis of g-C 3 N 4 NSs, CdSe quantum dots (QDs)/CN heterostructures are created through the successive ionic layer adsorption and reaction (SILAR) process (Figure 4b) [92].…”
Section: At Low Current Density (Lcd)mentioning
confidence: 99%
“…The nitrogen atoms in g-C 3 N 4 have a lone pair of electrons and can change the electron configuration of the supported materials by interfacial charge redistribution. Studies on the Co 3 O 4 /g-C 3 N 4 nanocomposite [94] and g-C 3 N 4 /Co 3 O 4 /α-Fe 2 O 3 [95] have proved that a strong coupling interaction is formed at the interface between the g-C 3 N 4 and the oxide, which acts as an effective electron transport channel and exposes more catalytically active sites, leading to outstanding OER performances with η 20 values of 170 and 359 mV and Tafel values of 188 and 116 mV dec −1 , respectively. Following the synthesis of g-C 3 N 4 NSs, CdSe quantum dots (QDs)/CN heterostructures are created through the successive ionic layer adsorption and reaction (SILAR) process (Figure 4b) [92].…”
Section: At Low Current Density (Lcd)mentioning
confidence: 99%