Co-Sputtered MgxZn(1-x)O window layers for CdTe(1-x)Sex solar cells

Baines, Tom; Durose, K.; Jonathan, D. Reuben

doi:10.1109/pvsc.2018.8547696

Cited by 4 publications

(8 citation statements)

References 17 publications

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“…of ZnO [19,[29][30][31][32][33][34][35][36]. With increasing Mg atomic fraction x, this (002) peak shifts to higher diffraction angle characteristic of the decrease in lattice parameter c due to the substitution of Mg at Zn lattice sites [29][30][31]33,34,36]. These results are in reasonable agreement with Wang et al and Baines et al who reported results on MZO films with Mg contents ranging from x = 0.0 to 0.25 deposited at higher substrate temperatures to different thicknesses [29,33].…”

Section: X-ray Diffraction (Xrd)supporting

confidence: 90%

“…It is interesting that the largest lower limit on the crystalline size occurs for the higher x compositional range of ~0.3-0.4, corresponding to a bandgap range of 3.7-3.8 eV, suggesting a reduction in intragranular defect density The most clearly observable feature in the pattern for MZO on SLG in Figure 1 is near 34 • , indexed as a (002) plane diffraction, revealing that the MZO films crystallize in the hexagonal crystal system. The presence of this feature also reveals that the dominant phase for all MZO films exhibits the wurtzite crystal structure which is the stable phase of ZnO [19,[29][30][31][32][33][34][35][36]. With increasing Mg atomic fraction x, this (002) peak shifts to higher diffraction angle characteristic of the decrease in lattice parameter c due to the substitution of Mg at Zn lattice sites [29][30][31]33,34,36].…”

Section: X-ray Diffraction (Xrd)mentioning

confidence: 86%

Section: X-ray Diffraction (Xrd)mentioning

confidence: 98%

“…Amorphous SLG was adopted as the substrate for the XRD analyses since only MZO crystalline features appear in the diffraction patterns whereas, for the conventional SnO 2 :F transparent conducting oxide coated substrates used in CdTe PV devices, SnO 2 features will occur as well. In fact, most researchers studying PV applications of MZO have deposited these films on TEC™ glass, a SnO 2 :F coated product designed for various applications including PV (NSG Pilkington NA) [29,32,33]. For low temperature MZO deposition and annealing, however, the diffraction features of the SnO 2 :F layer of the TEC™ glass materials dominate the XRD pattern, making it more difficult to resolve the peaks associated with the MZO film.…”

Section: X-ray Diffraction (Xrd)mentioning

confidence: 99%

“…With increasing Mg atomic fraction x, this (002) peak shifts to higher diffraction angle characteristic of the decrease in lattice parameter c due to the substitution of Mg at Zn lattice sites [29][30][31]33,34,36]. These results are in reasonable agreement with Wang et al and Baines et al who reported results on MZO films with Mg contents ranging from x = 0.0 to 0.25 deposited at higher substrate temperatures to different thicknesses [29,33]. The XRD pattern in Figure 1 shows additional weakly diffracting features also attributed to the wurtzite phase of MZO, the low index (100), ( 101), (102), and (103) diffraction peaks being recognizable.…”

Section: X-ray Diffraction (Xrd)mentioning

confidence: 99%

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Optical Properties of Magnesium-Zinc Oxide for Thin Film Photovoltaics

et al. 2021

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Motivated by their utility in CdTe-based thin film photovoltaics (PV) devices, an investigation of thin films of the magnesium-zinc oxide (MgxZn1−xO or MZO) alloy system was undertaken applying spectroscopic ellipsometry (SE). Dominant wurtzite phase MZO thin films with Mg contents in the range 0 ≤ x ≤ 0.42 were deposited on room temperature soda lime glass (SLG) substrates by magnetron co-sputtering of MgO and ZnO targets followed by annealing. The complex dielectric functions ε of these films were determined and parameterized over the photon energy range from 0.73 to 6.5 eV using an analytical model consisting of two critical point (CP) oscillators. The CP parameters in this model are expressed as polynomial functions of the best fitting lowest CP energy or bandgap E0 = Eg, which in turn is a quadratic function of x. As functions of x, both the lowest energy CP broadening and the Urbach parameter show minima for x ~ 0.3, which corresponds to a bandgap of 3.65 eV. As a result, it is concluded that for this composition and bandgap, the MZO exhibits either a minimum concentration of defects in the bulk of the crystallites or a maximum in the grain size, an observation consistent with measured X-ray diffraction line broadenings. The parametric expression for ε developed here is expected to be useful in future mapping and through-the-glass SE analyses of partial and complete PV device structures incorporating MZO.

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Section: X-ray Diffraction (Xrd)supporting

confidence: 90%

Section: X-ray Diffraction (Xrd)mentioning

confidence: 86%

Section: X-ray Diffraction (Xrd)mentioning

confidence: 98%

Section: X-ray Diffraction (Xrd)mentioning

confidence: 99%

Section: X-ray Diffraction (Xrd)mentioning

confidence: 99%

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Optical Properties of Magnesium-Zinc Oxide for Thin Film Photovoltaics

et al. 2021

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Reactive DC Sputtered TiO₂Electron Transport Layers for Cadmium‐Free Sb₂Se₃Solar Cells

Don,

Shalvey,

Sindi

et al. 2024

Advanced Energy Materials

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The evolution of Sb2Se3 heterojunction devices away from CdS electron transport layers (ETL) to wide bandgap metal oxide alternatives is a critical target in the development of this emerging photovoltaic material. Metal oxide ETL/Sb2Se3 device performance has historically been limited by relatively low fill factors, despite offering clear advantages with regards to photocurrent collection. In this study, TiO2 ETLs are fabricated via direct current reactive sputtering and tested in complete Sb2Se3 devices. A strong correlation between TiO2 ETL processing conditions and the Sb2Se3 solar cell device response under forward bias conditions is observed and optimized. Numerical device models support experimental evidence of a spike‐like conduction band offset, which can be mediated, provided a sufficiently high conductivity and low interfacial defect density can be achieved in the TiO2 ETL. Ultimately, a SnO2:F/TiO2/Sb2Se3/P3HT/Au device with the reactively sputtered TiO2 ETL delivers an 8.12% power conversion efficiency (η), the highest TiO2/Sb2Se3 device reported to‐date. This is achieved by a substantial reduction in series resistance, driven by improved crystallinity of the reactively sputtered anatase‐TiO2 ETL, whilst maintaining almost maximum current collection for this device architecture.

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Microscopic Analysis of Interdiffusion and Void Formation in CdTe_(1–x)Se_xand CdTe Layers

Baines

Bowen

Mendis

et al. 2020

ACS Appl. Mater. Interfaces

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The use of CdSe layers has recently emerged as a route to improving CdTe photovoltaics through the formation of a CdTe (1– x ) Se x (CST) phase. However, the extent of the Se diffusion and the influence it has on the CdTe grain structure has not been widely investigated. In this study, we used transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), and electron backscatter diffraction (EBSD) to investigate the impact of growing CdTe layers on three different window layer structures CdS, CdSe, and CdS/CdSe. We demonstrate that extensive intermixing occurs between CdS, CdSe, and CdTe layers resulting in large voids forming at the front interface, which will degrade device performance. The use of CdS/CdSe bilayer structures leads to the formation of a parasitic CdS (1– x ) Se x phase. Following removal of CdS from the cell structure, effective CdTe and CdSe intermixing was achieved. However, the use of sputtered CdSe had limited success in producing Se grading in CST.

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Co-Sputtered Mg_xZn_(1-x)O window layers for CdTe_(1-x)Se_x solar cells

Cited by 4 publications

References 17 publications

Optical Properties of Magnesium-Zinc Oxide for Thin Film Photovoltaics

Optical Properties of Magnesium-Zinc Oxide for Thin Film Photovoltaics

Reactive DC Sputtered TiO₂Electron Transport Layers for Cadmium‐Free Sb₂Se₃Solar Cells

Microscopic Analysis of Interdiffusion and Void Formation in CdTe_(1–x)Se_xand CdTe Layers

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Co-Sputtered MgxZn(1-x)O window layers for CdTe(1-x)Sex solar cells

Cited by 4 publications

References 17 publications

Optical Properties of Magnesium-Zinc Oxide for Thin Film Photovoltaics

Optical Properties of Magnesium-Zinc Oxide for Thin Film Photovoltaics

Reactive DC Sputtered TiO2Electron Transport Layers for Cadmium‐Free Sb2Se3Solar Cells

Microscopic Analysis of Interdiffusion and Void Formation in CdTe(1–x)Sexand CdTe Layers

Contact Info

Product

Resources

About

Co-Sputtered Mg_xZn_(1-x)O window layers for CdTe_(1-x)Se_x solar cells

Reactive DC Sputtered TiO₂Electron Transport Layers for Cadmium‐Free Sb₂Se₃Solar Cells

Microscopic Analysis of Interdiffusion and Void Formation in CdTe_(1–x)Se_xand CdTe Layers