CO2 plasma treatment to promote crystallinity of p-type emitter layer for the silicon heterojunction solar cells

Jiang, Yuanjian

doi:10.1007/s10854-021-07559-x

Cited by 4 publications

(2 citation statements)

References 27 publications

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“…Mazzarella et al 25 and Jiang 26 found that CO 2 PT on the i/p interface of the SHJ solar cells promoted nucleation and improved the conductivity of p‐type emitter layer. To study the structural features of p‐a‐Si:H film, Raman spectra of samples without and with a 20 s CO 2 PT process are shown in Figure S5.…”

Section: Resultsmentioning

confidence: 99%

Dipoles and defects caused by CO₂ plasma improve carrier transport of silicon solar cells

Huang,

Yang,

et al. 2023

Progress in Photovoltaics

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Carrier‐selective contact is a fundamental issue for solar cells. For silicon heterojunction (SHJ) solar cells, it is important to improve hole transport because of the low doping efficiency of boron in amorphous silicon and the barrier stemming from valence band offset. Here, we develop a carbon dioxide (CO2) plasma treatment (PT) process to form dipoles and defect states. We find a dipole moment caused by longitudinal distribution of H and O atoms. It improves hole transport and blocks electron transport and thus suppresses carrier recombination. In the meantime, the CO2 PT process also results in defect states, which reduce passivation performance but improve hole hopping in the intrinsic amorphous layer. As a balance, an appropriate CO2 PT process at the i/p interface increases fill factor and power conversion efficiency of SHJ solar cells. We emphasize, based on sufficient evidences, this work finds a distinct role of the CO2 plasma in SHJ solar cells opposed to reported mechanisms.

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Section: Resultsmentioning

confidence: 99%

Dipoles and defects caused by CO₂ plasma improve carrier transport of silicon solar cells

Huang,

Yang,

et al. 2023

Progress in Photovoltaics

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“…In contrast, the CO 2 pretreatment cells showed significant increases in V OC and FF. The CO 2 treatment on p-nc-Si:H can not only improve the χ C , but also enhances the boron doping efficiency [29,30]. The simultaneous improvement in χ c and doping efficiency results in a reduction of carrier extraction and transmission losses.…”

Section: Effect Of Interface Treatment On the Properties Of Shj Cellsmentioning

confidence: 99%

Application of interface treatment at different position p-nc-Si:H hole collector of silicon heterojunction cells

Li,

Zhang,

Wang

et al. 2023

Nanotechnology

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The hole collector in silicon heterojunction cells serves not only as an integral component of the p/n junction, determining the strength of the built-in electric field, but also as a layer responsible for hole transport, thereby affecting carrier transport capacity. To enhance carrier extraction and transport properties of the hole collector, various interface treatments have been employed on p-type nanocrystalline (p-nc-Si:H) hole collectors. Through an examination of characteristics such as dark conductivity, crystallinity, and contact resistance, the impact of interface treatment on p-nc-Si:H hole collectors is clarified. Furthermore, considering distinct requirements for the hole collector at different locations, interface treatment processes are optimized accordingly. The introduction of interface treatment on p-nc-Si:H hole collectors has demonstrated significant enhancement of both front and rear junction cell efficiencies, which increased from 17.74% to 21.61% and from 16.83% to 20.92%, respectively.

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A method to slow down the etching of hydrogen plasma pretreatment and improve passivation in silicon heterojunction solar cells

Li,

Liu,

Tao

et al. 2024

Solar Energy Materials and Solar Cells

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CO2 plasma treatment to promote crystallinity of p-type emitter layer for the silicon heterojunction solar cells

Cited by 4 publications

References 27 publications

Dipoles and defects caused by CO₂ plasma improve carrier transport of silicon solar cells

Dipoles and defects caused by CO₂ plasma improve carrier transport of silicon solar cells

Application of interface treatment at different position p-nc-Si:H hole collector of silicon heterojunction cells

A method to slow down the etching of hydrogen plasma pretreatment and improve passivation in silicon heterojunction solar cells

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CO2 plasma treatment to promote crystallinity of p-type emitter layer for the silicon heterojunction solar cells

Cited by 4 publications

References 27 publications

Dipoles and defects caused by CO2 plasma improve carrier transport of silicon solar cells

Dipoles and defects caused by CO2 plasma improve carrier transport of silicon solar cells

Application of interface treatment at different position p-nc-Si:H hole collector of silicon heterojunction cells

A method to slow down the etching of hydrogen plasma pretreatment and improve passivation in silicon heterojunction solar cells

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Dipoles and defects caused by CO₂ plasma improve carrier transport of silicon solar cells

Dipoles and defects caused by CO₂ plasma improve carrier transport of silicon solar cells