2007
DOI: 10.1016/j.supflu.2007.02.007
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CO2 promotes penetration and removal of aqueous hydrocarbon surfactant cleaning solutions and silylation in low-k dielectrics with 3nm pores

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Cited by 19 publications
(12 citation statements)
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“…This simulation result shows that the presence of CO 2 fluids decreases the wettability of the surface. This obtained phenomenon is qualitatively consistent with the experimental observations on the wetting behavior at the CO 2 /water/glass [9] and CO 2 /water/polystyrene [10] interfaces. Figure 4 illustrates the water wetting behavior on the hydrophobic surface.…”
Section: Models and Methodssupporting
confidence: 91%
See 1 more Smart Citation
“…This simulation result shows that the presence of CO 2 fluids decreases the wettability of the surface. This obtained phenomenon is qualitatively consistent with the experimental observations on the wetting behavior at the CO 2 /water/glass [9] and CO 2 /water/polystyrene [10] interfaces. Figure 4 illustrates the water wetting behavior on the hydrophobic surface.…”
Section: Models and Methodssupporting
confidence: 91%
“…The successful removal *Corresponding author (email: yangxia@njut.edu.cn) of residues has been achieved in just 2 min for porous material with a 130 nm pattern feature. Keagy et al [9] demonstrated experimentally that the scCO 2 fluid can rapidly remove aqueous surfactant solutions from a methylsilsesquioxane (MSQ) low dielectric constant film with 3 nm pores. The addition of CO 2 fluid is expected to reduce the interfacial tension and thus lower the capillary pressure of nanopores.…”
mentioning
confidence: 99%
“…Recently, several studies of block copolymer thin films used CO 2 to induce the ordering of copolymer templates,5–8 to control the spatial distribution of metal nanoparticles in copolymer matrices,9 and to diffuse precursors in copolymers for the synthesis of nanoporous materials 10. In addition to polymer processing, supercritical CO 2 has been investigated as a potential medium in many microelectronic thin film processes 11–18. For example, it has been shown that CO 2 promotes penetration and removal of aqueous surfactant cleaning solutions in methylsilsesquioxane (MSQ) low dielectric constant ( k ) films 15.…”
Section: Introductionmentioning
confidence: 99%
“…As the features shrink to nano-scale, the cleaning solution contained in the acid and alkali and strong oxidizing agents can cause surface microroughness and structural deformation, aqueous cleaning is unfeasible due to surface tension and capillary forces increase [2][3][4]. Nanoporous silica (NPS) is a hotspot in ultra-low dielectric constant material domain, but highly corrosive chemical cleaning will destroy the material, the capillary force of water can also cause structural collapse [5]; The traditional cleaning has consumed a great deal of pure water and organic solvent, which inevitably caused serious environmental pollution, physical hazards and water waste. Therefore, looking for environmental friendly solvent is a trend for microelectronics and other high-tech technology.…”
Section: Introductionmentioning
confidence: 99%