Coating by Chemical Vapor Deposition (CVD)

Blocher, J.M.

doi:10.4271/730543

Cited by 6 publications

(9 citation statements)

References 4 publications

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“…This technique was used then as now either to p r e p a r e very pure metals, metal coatings, or diverse free-standing metal shapes (45)(46)(47)(48). The subject, which has since been renamed chemical vapor deposition or CVD, has been another important area of activities of the Electrothermics and Metallurgy Division with a number of meetings held under its auspices since 1955 (49)(50)(51)(52)(53)(54). Its application to the electronics field was reviewed in some detail a few years ago by Tietjen (55).…”

Section: New Heat Sources and New Processesmentioning

confidence: 99%

Process and Equipment Developments in Electrothermics and Metallurgy over the Last Twenty‐Five Years

Bakish

1978

J. Electrochem. Soc.

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Electrochemical Society has a relatively broad mission in the subject matter which it considers as its province, and in the past 25 years much has transpired here. Referen:e is made to the period 1952-1977, the first year of which coincides with this writer's graduation as a metallurgist from Columbia University. Progress in these areas has had a major influence in much that is related to materials and materials processing today.Let us begin by examining the scope of interests of the Division by considering the definition of the scope of its mission. By definition metallurgy is the science and art of extracting metals from their ores, refining them, and preparing them for use, while electrothermics in its broadest connotation is the use of electrical energy for heat generation and the application of this heat to a wide range of metal and nonmetal processing operations.

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Section: New Heat Sources and New Processesmentioning

confidence: 99%

Process and Equipment Developments in Electrothermics and Metallurgy over the Last Twenty‐Five Years

Bakish

1978

J. Electrochem. Soc.

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“…The thermal diffusion factor al0 of a gas of molecular weight M1 in a gas of molecular weight M0 depends in a complex manner on the ratio of the concentrations, masses, and diameters of the molecules and the nature of their interaction (8). Assuming that the molecules are rigid elastic spheres it can be derived that for a diluted gas to a first order of approximation ~10 = a ~/o + M1 [10] where a is a factor of order unity. Now the ratio of the two fluxes J~ and J2 is modified by the combined effects of mass and thermal diffusion to J1 Pl T* (~Io)…”

Section: ( )mentioning

confidence: 99%

“…The difference A~ of the thermal diffusion factors can be caIculated from Eq. [9] and [10] to be positive and approximately equal to…”

Section: I1 (1 Tm]mentioning

confidence: 99%

“…An experimental reactor for CVD in which both the requirements of intense mixing and small depletion are combined has been described earlier (10), though the requirements for isotope separation were of no relevance then. A tantalum wire was mounted between two arms which also serve as electrical contacts to heat the wire.…”

Section: Description Of the Liquid-source Cvd Processmentioning

confidence: 99%

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Chemical Vapor Deposition and Isotope Separation

Severin

Lydtin

1977

J. Electrochem. Soc.

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Because chemical vapor deposition (CVD) is based on diffusion, isotope separation should take place if the process is in the diffusion‐limited range. The enrichment in a horizontal reactor as used for silicon epitaxy is calculated including thermal diffusion effects. It is found that whereas the deposition rate decreases exponentially along the reactor with characteristic length Λ, the isotope enrichment decreases linearly over the length from maximum to zero at x=normalΛ . The maximum value depends in a complex way on the masses and concentrations of the gas to be separated and the second gas, present as a reaction component or carrier gas. The requirements for efficient CVD isotope enrichment, which include fast mixing, a high deposition rate, and high enrichment ratio can be satisfied better by a liquid‐source CVD system. An experimental arrangement is described and discussed in terms of heat transfer by film boiling. The absence of an unstable range in the plot of the heat flux against the temperature is ascribed to the effects of the decomposition process which dominates the evaporation. The importance of the increased rate of heat transfer due to the reversible accumulation of energy in chemical reaction products is stressed. The effect of an applied electric field is mentioned. Experiments with carbon deposition from C12H26 have shown a 12C/13C enrichment ratio up to 0.8%, whereas normalΔM/2M=0.3% . This effect is attributable to mass and thermal diffusion, selective evaporation, spray fractionation by drops acting as microultracentrifuges, and geometry effects. The possibility of achieving uranium isotope separation with a CVD process has been considered theoretically. Thermodynamically possible reactions are specified by which liquid UF6 is transformed into solid UF3 , UF4 , and UF5 . In this way uranium should be transported quickly from one condensed phase to another with an increasing lighter isotope concentration in the deposited reaction product. The reactor products can easily be retransformed into UF6 so that the enrichment cycle can be repeated until the desired isotope ratio is achieved. In principle CVD can also be used as a collector mechanism with laser‐induced isotope enrichment.

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“…Along with high-vacuum physical methods for producing thin films, chemical vapour deposition (CVD) is widely used. [1][2][3]. Thus, the MOC-hydride epitaxy method has taken a leading position in the production of planar semiconductor structures A III B V , A II B VI and solid solutions based on them [4], and metalorganic precursor vapour deposition (MOCVD) is successfully used to obtain a wide range of oxide coatings, as well as in the development of functional materials for oxide electronics [5].…”

Section: Introductionmentioning

confidence: 99%

TSF-MOCVD – a novel technique for chemical vapour deposition on oxide thin films and layered heterostructures

Kaul

Nygaard

Ratovskiy

et al. 2021

kcmf

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A new principle for supplying volatile precursors to MOCVD gas-phase chemical deposition systems is proposed, based on a two-stage evaporation of an organic solution of precursors from a soaked cotton thread, which passes sequentially through the zones of evaporation of the solvent and precursors. The technological capabilities of TSF-MOCVD (Thread-Solution Feed MOCVD) are demonstrated based on examples of obtaining thin epitaxial films of СеО2, h-LuFeO3 and thin-film heterostructures β-Fe2O3/h-LuFeO3. The results of studying the obtained films by X-ray diffraction, energy dispersive X-rayanalysis, and high- and low-resolution transmission microscopy are presented. Using the TSF module, one can finely vary the crystallisation conditions, obtaining coatings of the required degree of crystallinity, as evidenced by the obtained dependences of the integral width of the h-LuFeO3 reflection on the film growth rate. Based on the TEM and XRD data, it was concluded that β-Fe2O3 grows epitaxially over the h-LuFeO3 layer. Thus, using TSF-MOCVD, one can flexibly change the composition of layered heterostructures and obtain highly crystalline epitaxial films with a clear interface in a continuous deposition process

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Coating by Chemical Vapor Deposition (CVD)

Cited by 6 publications

References 4 publications

Process and Equipment Developments in Electrothermics and Metallurgy over the Last Twenty‐Five Years

Process and Equipment Developments in Electrothermics and Metallurgy over the Last Twenty‐Five Years

Chemical Vapor Deposition and Isotope Separation

TSF-MOCVD – a novel technique for chemical vapour deposition on oxide thin films and layered heterostructures

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