Cobalt-60, Proton and Electron Irradiation of a Radiation-Hardened Active Pixel Sensor

Hervé, Dominique; Beaumel, M.; Aken, Dirk Van

doi:10.1109/tns.2010.2048043

Cited by 34 publications

(14 citation statements)

References 14 publications

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“…For the higher fluences a second peak between 14 -16 ke -/s can be observed, and it is more pronounced for fluence 1·10 12 p/cm 2 . Similar second peak was observed by Beaumel in HAS2 imager after irradiation with 62 MeV protons with fluence of 1.95·10 11 p/cm 2 [20]. After the second peek an exponential tail can be seen.…”

Section: Chania Greece 9 -12 October 2018supporting

confidence: 83%

Radiation tests on the COTS image sensor from CMOSIS

Adamiec¹,

Barbero²,

Moya³

et al. 2019

International Conference on Space Optics — ICSO 2018

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12 Mpix color commercial-of-the-shelf (COTS) image sensor from CMOSIS was tested with proton radiation. The target mission required an irradiation with protons of energy of 50 MeV and fluences up to 1·10 12 p/cm 2 . Several intermediate steps were introduced to check the behavior of the image sensor. A low-cost test camera was developed to control the image sensors, acquire the images, and monitor the currents and voltages during the tests. Each color was characterized separately according to the EMVA 1288 standard. Such treatment allowed also analysis of the bayer filter deposited on the image sensor surface. Post-radiation characterization revealed that a significant deterioration in the parameter performance was found independently of the pixel color. The most affected parameters were dark current and dark signal nonuniformities (DSNU) which have increased from about one to two orders of magnitude.

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Section: Chania Greece 9 -12 October 2018supporting

confidence: 83%

Radiation tests on the COTS image sensor from CMOSIS

Adamiec¹,

Barbero²,

Moya³

et al. 2019

International Conference on Space Optics — ICSO 2018

View full text Add to dashboard Cite

show abstract

“…Dark signal spike is a particular concern to star tracker performance: standing out as isolated bright pixels, they can be mistaken for stars. 25 Dark signal spikes which present a large amount of bright points from dark images shown in Fig. 7(b)-7(d) are thought to be partly originating from neutron irradiation induced bulk traps created in high electric field depletion regions.…”

Section: Dark Signal Spike Increasementioning

confidence: 93%

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

et al. 2014

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The experiments of reactor neutron irradiation which induce dark signal increase in COTS array CCDs are presented. The flux of the reactor neutron beams was about 1.33 × 108 n/cm2s. The three samples were exposed to 1MeV neutron-equivalent fluences of 1 × 1011, 5 × 1011, and 1 × 1012 n/cm2, respectively. The mean dark signal (KD), dark signal non-uniformity (DSNU), and dark signal spikes (hot pixels) versus neutron fluence are investigated. The degradation mechanisms of the dark signal in CCDs are analyzed. The mean dark signal increase due to neutron displacement damage appears to be proportional to displacement damage dose. The dark images from the CCDs irradiated by neutrons are presented to investigate the generation of dark signal spike. The 1D and 2D figures which show the output signal voltage of pixels in dark images irradiated by different neutron beam fluences, are presented to compare the degradation of KD, DSNU, and dark signal spike.

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“…The DSNU increase is correlated on the basis of the non-ionizing energy loss imparted by a particle in elastic and inelastic collisions. 14 …”

Section: A Degradation On Dark Signal Non-uniformitymentioning

confidence: 99%

Combined reactor neutron beam and 60Co γ-ray radiation effects on CMOS APS image sensors

et al. 2015

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The combined reactor neutron beam and 60Co γ-ray radiation effects on complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have been discussed and some new experimental phenomena are presented. The samples are manufactured in the standard 0.35-μm CMOS technology. Two samples were first exposed to 60Co γ-rays up to the total ionizing dose (TID) level of 200 krad(Si) at the dose rates of 50.0 and 0.2 rad(Si)/s, and then exposed to neutron fluence up to 1 × 1011 n/cm2 (1-MeV equivalent neutron fluence). One sample was first exposed to neutron fluence up to 1 × 1011 n/cm2 (1-MeV equivalent neutron fluence), and then exposed to 60Co γ-rays up to the TID level of 200 krad(Si) at the dose rate of 0.2 rad(Si)/s. The mean dark signal (KD), the dark signal non-uniformity (DSNU), and the noise (VN) versus the total dose and neutron fluence has been investigated. The degradation mechanisms of CMOS APS image sensors have been analyzed, especially for the interaction induced by neutron displacement damage and TID damage.

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Cobalt-60, Proton and Electron Irradiation of a Radiation-Hardened Active Pixel Sensor

Cited by 34 publications

References 14 publications

Radiation tests on the COTS image sensor from CMOSIS

Radiation tests on the COTS image sensor from CMOSIS

Investigation of reactor neutron irradiation induced dark signals increase in COTS array CCDs

Combined reactor neutron beam and 60Co γ-ray radiation effects on CMOS APS image sensors

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