Cobalt germanide contacts: growth reaction, phase formation models, and electrical properties

Rabie, Mohamed A.; Mirza, Souzan; Hu, Yujie; Haddara, Yaser M.

doi:10.1007/s10854-019-01366-1

Cited by 2 publications

(5 citation statements)

References 151 publications

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“…Germanides are a class of materials that have garnered significant attention because of their potential thermoelectric and electronic applications. 23,24 These compounds are formed by combining germanium with diverse metallic elements such as iron, nickel, cobalt, and palladium. [25][26][27][28] Germanides are characterized by high electrical conductivity, low thermal conductivity, and favorable thermoelectric characteristics that make them attractive.…”

Section: Introductionmentioning

confidence: 99%

“…[25][26][27][28] Germanides are characterized by high electrical conductivity, low thermal conductivity, and favorable thermoelectric characteristics that make them attractive. 24,29,30 As such, germanides have emerged as promising active materials for thermoelectric generators, coolers, and electronic devices (e.g., transistors, diodes, integrated circuit interconnects). 27,28,[30][31][32] Embracing the principles of high-entropy alloying can provide enhancement of thermoelectric performance and substantial progress has been achieved in the field of high-performance high-entropy alloy thermoelectrics.…”

Section: Introductionmentioning

confidence: 99%

“…25–28 Germanides are characterized by high electrical conductivity, low thermal conductivity, and favorable thermoelectric characteristics that make them attractive. 24,29,30 As such, germanides have emerged as promising active materials for thermoelectric generators, coolers, and electronic devices ( e.g. , transistors, diodes, integrated circuit interconnects).…”

Section: Introductionmentioning

confidence: 99%

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Synthesis of high-entropy germanides and investigation of their formation process

Ni,

O’Connor,

Butler

et al. 2024

Nanoscale Horiz.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Synthesis of high-entropy germanides and investigation of their formation process

Ni,

O’Connor,

Butler

et al. 2024

Nanoscale Horiz.

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“…[282][283] The siliconrich CoSi2 is the most relevant binary Co-Si phase as it played an important role in the semiconductor industry where it was used as a contact material in complementary metal-oxide semiconductor (CMOS) devices. 284 Initially, aluminum was used as electrode material, however, the tendency of it to diffuse into the silicon required the implementation of diffusion barriers. Transition metal silicides were the material of choice as they not only fulfill the required physical properties (low resistivity, good thermal stability) but also can be formed in a selfaligned silicide (SALICIDE) process.…”

Section: Co-simentioning

confidence: 99%

“…With the advent of FinFET technology requirements for silicide contacts changed and the industry returned to TiSi. 284…”

Section: Co-simentioning

confidence: 99%

New precursors for direct writing of nanostructures using charged particle beams

Meyer¹

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Focused electron and ion beam induced deposition (FEBID/FIBID) methods have gained significant attention in recent years because of their unique ability for the maskless fabrication of arbitrary three-dimensional shapes. Both techniques enable material deposition down to the nanoscale for applications in materials science and condensed matter physics. However, the number of suitable precursor molecules, especially for high purity deposits, is usually still very limited to date. Additionally, both the FEBID and FIBID process are very complex when assessed in detailed and the development of process-optimize, tailored precursor molecules is not yet possible. In the first part of this work hexacarbonyl vanadium (V(CO)6) and dimanganese decacarbonyl (Mn2(CO)10) are investigated for their use in FEBID in order to complement the already existing data on transition metal carbonyl precursors. In addition, chemical vapor deposition (CVD) has been carried out to compare compositional differences for electron induced and purely thermal processes. FEBID using V(CO)6 resulted in the formation of a vanadium (oxy)carbide material with a V:C ratio of approx. 0.6-0.9. The material shows a temperature-dependent normalized electrical conductance typical for granular metals in agreement with TEM analysis. Additionally, characterization of the crystalline fractions reveals a cubic VC1-xOx phase in agreement with the phase observed in CVD thin films. Thermal decomposition using CVD yielded material of higher purity with V:C ratios of 1.1-1.3. In contrast, an insulating material with approx. 40 at% Mn is obtained for FEBID using Mn2(CO)10 as precursor with very similar compositions being observed for CVD thin films. The second part of this work deals with the deposition of defined alloy materials by focused charged particle beam deposition. Three silyl substituted transition metal carbonyl complexes have been synthesized and tested for FEBID, FIBID and CVD. The three precursors investigated were: H3SiMn(CO)5, H3SiCo(CO)4, and H2Si(Co(CO)4)2. FEBID experiments with the manganese derivative show the selective loss of silicon, and metal/metalloid contents of up to 49 at%. Contrary, material derived from both cobalt derivatives did retain the 1:1 and 2:1 Co:Si ratios respectively, resulting in metal/metalloid contents of up to 62 at%. Temperature-dependent normalized electrical conductance measurements of as-grown and post-growth electron beam irradiated samples reveal behavior typical for granular metals except for the as-grown CoSi material which is located on the insulating side of the metal-insulator transition. Ga+-FIBID revealed H2Si(Co(CO)4)2 to be a very suitable precursor, retaining the predefined Co:Si ratio in the deposits, while significant loss of silicon was observed for H3SiCo(CO)4 derived deposits. Contrary to FEBID high metal/metalloid contents of up to 90 at% are obtained. Additionally, temperature dependent electrical properties of dicobalt silicide and the expected ferromagnetic behavior have been observed for the Co2Si-FIBID material. Further analysis enables the proposition of different dominating decomposition channels in FEBID and FIBID based on microstructural features such as bubble formation in FIBID materials.

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Cobalt germanide contacts: growth reaction, phase formation models, and electrical properties

Cited by 2 publications

References 151 publications

Synthesis of high-entropy germanides and investigation of their formation process

Synthesis of high-entropy germanides and investigation of their formation process

New precursors for direct writing of nanostructures using charged particle beams

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