We have explored the effect of magnetic rare-earth dopants substitutionally incorporated on the Ba sites of BaSnO 3 in terms of electronic transport, magnetism, and optical properties. We show that for Ba 0.92 R 0.08 SnO 3 thin films (where R = La, Pr, Nd, Gd), there is a linear increase of mobility with carrier concentration across all doping schemes. La-doped films have the highest mobilities, followed by Pr-and Nd-doped films. Gddoped samples have the largest ionic size mismatch with the Ba site and correspondingly the lowest carrier concentrations and electron mobilities. However, crystallinity does not appear to be a strong predictor of transport phenomena; our results suggest that point defects more than grain boundaries are key ingredients in tuning the conduction of BaSnO 3 films grown by pulsed laser deposition. Pronounced, nonhysteretic x-ray magnetic dichroism signals are observed for Pr-, Nd-, and Gd-doped samples, indicating paramagnetism. Finally, we probe the optical constants for each of the BaSnO 3 doping schemes and note that there is little change in the transmittance across all samples. Together these results shed light on conduction mechanisms in BaSnO 3 doped with rare-earth cations.