2010 IEEE International Symposium on Information Theory 2010
DOI: 10.1109/isit.2010.5513604
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Codes in permutations and error correction for rank modulation

Abstract: Abstract-Codes for rank modulation have been recently proposed as a means of protecting flash memory devices from errors. We study basic coding theoretic problems for such codes, representing them as subsets of the set of permutations of n elements equipped with the Kendall tau distance. We derive several lower and upper bounds on the size of codes. These bounds enable us to establish the exact scaling of the size of optimal codes for large values of n. We also show the existence of codes whose size is within … Show more

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Cited by 56 publications
(146 citation statements)
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“…An expression for K n (D) (and thus T n (D)) for D ≤ n appears in [10] (see [4] also). The following bound is weaker but sufficient in our context.…”
Section: Geometry Of Permutation Spacesmentioning
confidence: 99%
See 1 more Smart Citation
“…An expression for K n (D) (and thus T n (D)) for D ≤ n appears in [10] (see [4] also). The following bound is weaker but sufficient in our context.…”
Section: Geometry Of Permutation Spacesmentioning
confidence: 99%
“…For example, some works focus on codes in S n with Hamming distance [1], [2], and some others investigate the error correction problem under metrics such as Chebyshev distance [3] and Kendall tau distance [4].…”
Section: Introductionmentioning
confidence: 99%
“…Apart from the natural sorting algorithms, Kendall tau distance has recently attracted substantial interest in the area of error-correcting codes for Flash memory [5], [6], Kendall tau distance is also a global measure of disarray that is very popular in statistics. It is closely related to the Spearman's footrule, as we will see next.…”
Section: Operational Meaning Of the Distortion Measuresmentioning
confidence: 99%
“…Alternatives such as low-density parity check (LDPC) decoding is applied with the aid of soft information to maximize the mutual information between the input and the output and enhance by that the accuracy of the read operation [4]. Rank modulation schemes address the writing asymmetry within memory where the relative charge among several cells is used to represent the information [5]. Moreover, dynamic threshold setting is employed in flash memories, where the threshold is not fixed, but rather recalculated at every read operation [6], [7].…”
Section: Introductionmentioning
confidence: 99%