Codoping Er‐N to Suppress Self‐Compensation Donors for Stable <i>p</i>‐Type Zinc Oxide

Ouyang, Yifang; Meng, Zhisen; Mo, Xiaoming; Chen, Hongmei; Tao, Xinyong; Peng, Qing; Du, Youwei

doi:10.1002/adts.201800133

Cited by 2 publications

(2 citation statements)

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“…These resistivity values are one order of magnitude higher than those of the best Ca‐doped YIG films obtained by LPE, i.e., around 10 2 Ω cm resistivity at 450 K . The difference might be due to a stronger self‐compensation of Ca 2+ with oxygen vacancies or a lower acceptor solubility in the thin films. The single scenario of the self‐compensation mechanism can be written as followed

{Bi}_{2.5} {normalY}_{0.2} {Ca}_{0.3} {Fe}_{5} {normalO}_{12 - δ} \to {Bi}_{2.5}^{3 +} {normalY}_{0.2}^{3 +} {Ca}_{0.3}^{2 +} {Fe}_{4.7 + 2 δ}^{3 +} {Fe}_{0.3 - 2 δ}^{4 +} {normalO}_{12 - δ}

which in the Kröger–Vink notation becomes

\begin{matrix} left \\ 0.3 Ca'_{Bi} + 4.7 {normalFe}_{Fe}^{x} + 0.3 {normalFe}_{Fe}^{•} + 12 {normalO}_{normalO}^{x} \Leftrightarrow 0.3 Ca'_{Bi} \\ + (4.7 + 2 δ) {normalFe}_{Fe}^{x} + (0.3 - 2 δ) {normalFe}_{Fe}^{•} \\ + δ {normalV}_{normalO}^{• •} + \frac{δ}{2} {normalO}_{2 (g)} + (12 - δ) {normalO}_{normalo}^{x} (for δ < 0 .15) \end{matrix}

where

…”

Section: Resultsmentioning

confidence: 73%

“…Earlier works in TMO thin films reported on the strong cell volume and/or strain dependence linked to the oxygen vacancies formation where, for example, a tensile strain increases the concentration of oxygen vacancies in CaMnO 3 thin films . On that aspect, the cosubstitution can also act as a lever for controlling the cell volume and could govern the self‐compensation mechanism when fine‐tuning p‐ and n‐doped BIGs as demonstrated in the case of ZnO …”

Section: Resultsmentioning

confidence: 99%

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Atmosphere‐Induced Reversible Resistivity Changes in Ca/Y‐Doped Bismuth Iron Garnet Thin Films

Teurtrie

Popova

Koita

et al. 2019

Adv Funct Materials

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Bismuth iron garnet Bi3Fe5O12 (BIG) is a multifunctional insulating oxide exhibiting remarkably the largest known Faraday rotation and linear magnetoelectric coupling. Enhancing the electrical conductivity in BIG while preserving its magnetic properties would further widen its range of potential applications in oxitronic devices. Here, a site‐selective codoping strategy in which Ca2+ and Y3+ substitute for Bi3+ is applied. The resulting p‐ and n‐type doped BIG films combine state‐of‐the‐art magneto‐optical properties and semiconducting behaviors above room temperature with rather low resistivity: 40 Ω cm at 450 K is achieved in an n‐type Y‐doped BIG; this is ten orders of magnitude lower than that of Y3Fe5O12. High‐resolution electron spectromicroscopy unveils the complete dopant solubility and the charge compensation mechanisms at the local scale in p‐ and n‐type systems. Oxygen vacancies as intrinsic donors play a key role in the conduction mechanisms of these doped BIG films. On the other hand, a self‐compensation of Ca2+ with oxygen vacancies tends to limit the conduction in p‐type Ca/Y‐doped BIG. These results highlight the possibility of integrating n‐type and p‐type doped BIG films in spintronic structures as well as their potential use in gas sensing applications.

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