Coefficient of Expansion of GaAs, GaP, and Ga(As, P) Compounds from −62° to 200°C

Abstract

Precise cell dimensions of GaAs, GaAs0.59P0.41, GaAs0.5P0.5, and GaP have been determined from x-ray powder diffraction patterns from −62° to 200°C. Within the temperature range investigated, the constant thermal coefficients of expansion are, respectively, 6.86×10−6, 7.81×10−6, 5.91×10−6, and 5.81×10−6°C−1. The cell dimension of pure GaP (impurity less than 3.0 ppm) is 5.4495±0.0001 Å at 24°C.

Growth and characterization of cubic InxGa1−xN epilayers on two different types of substrate

“…Table 2 Experimental values of deformation potential constants p and q (divided by o 2 0 ) obtained for different zinc-blende materials GaAs LO-phonon À0.563 À0.813 0.9010 À1.119 [13] Ge TO-phonon À0.737 À0.967 0.7547 À1.204 [14] GaAs TO-phonon À0.833 À0.933 0.9010 À1.116 [14] GaSb TO-phonon À0.955 À0.967 0.9129 À1.476 [14] InAs TO-phonon À0.470 À1.040 1.0873 À1.569 [14] Si À0.693 À1.003 0.7704 À1.472 [15] Values of a and b are calculated by Eqs. (4).…”

“…The films are grown by RF plasmaassisted molecular beam epitaxy (MBE). Since the lattice mismatch [4][5][6] between GaN and GaAs ($20%) is much larger than that between GaN and 3C-SiC ($3.6%), we would expect better pseudomorphic growth on the latter. In order to test this idea, we performed Raman scattering and X-ray diffraction (XRD) experiments on these epilayers.…”

GaN HEMT based high energy particles detection preamplifier

“…Si GaAs SiC GaN Band gap E G [eV ] [17] 1.1 1.42 2.3~3.3 3.44 Critical field strength E C [10 6 V /cm] [17] 0.4 0.5 4 6 Mobility µ cm 2 /V •s [11,14] 1450 5000 900 2000 Thermal conductivity κ [ W /cm•K] [17] 1.5 0.5 3~5 1.3 Electron saturation velocity ve sat 10 7 cm /s [11,14,1] 1 1.4 2.2 3 Lattice Constant (Å) [11,17] 5.43 5.65 3.08 3.19 Coefficient of Thermal Expansion α [10 −6 × K −1 ] [11,13] 2.6 6.86 4.2 5.6 The thermal conductivity κ of the GaN is lower than Si and SiC. The implication of it is that GaN has lower power dissipation, limiting it to lower voltages, if one intends to use it for power devices.…”

Incorporation de l'aluminium, du phosphore et du zinc dans les hétérojonctions AlxGa1-xPyAs 1-y-GaAs réalisées par épitaxie en phase liquide

“…Il est nul à 850 C. Il en est de même pour un cristal mixte ternaire Ga1-xAlxAs. Mais, par suite des coefficients de dilations linéaires différents de ces matériaux : GaAs : a = 6,86 x 10-6 C-' [24], AlAs : u = 5,2 x 10-6 C-' [25], un écart apparaît lors du retour à la température ambiante. Cet écart est relativement important : 1,4 x 10-3 pour AlAs et 8,5 x 10-4 pour Ga0,39Al0,61As ( Fig.…”