Coexistence mechanisms of negative differential resistance and resistive switching effects in a WO_x-based memristor

Abstract

Metal oxide memristors are highly desirable for bionic synaptic applications.

Nanoscale-Thick La0.7Sr0.3MnO3 Films for Memristor Devices with Negative Differential Resistance-Coupled Resistive Switching Behavior

“…The current increases only slightly as the voltage is then increased to −2.5 V, and the device remains in HRS for the duration of the voltage increase from −2.5 to 0 V. The above situation indicates that the coexistence of RS and NDR behavior occurs in devices with a functional layer deposition time of 60 min, which may be caused by the migration of defects (such as oxygen vacancies) in the functional layer. 37,38 The NDR- coupled RS behavior at room temperature makes the device promising for applications in bionic computing, 39 multifunctional devices, 40 and nonvolatile multilevel memory devices. 41 When the deposition time of the La 0.7 Sr 0.3 MnO 3 film increases to 90 min, the NDR effect in the device begins to decay.…”