Coexistence of antiferromagnetism and glassy magnetic state and signature of quantum interference effects in the frustrated ternary silicides HoScSi and ErScSi

Yadav, Kavita; P, Koushik; Singh, Saurabh; Hagihala, Masato; Mukherjee, K.

doi:10.1103/physrevb.109.224409

Phys. Rev. B

2024

DOI: 10.1103/physrevb.109.224409

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Coexistence of antiferromagnetism and glassy magnetic state and signature of quantum interference effects in the frustrated ternary silicides HoScSi and ErScSi

Kavita Yadav,

Koushik P,

Saurabh Singh

et al.

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Carrier localization induced by electron-electron interaction and its impact on the electrical transport and magnetic properties of nonstoichiometric IrMnSn

P.,

Mukherjee

2024

Phys. Rev. B

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Carrier localization induced by electron-electron interaction and its impact on the electrical transport and magnetic properties of nonstoichiometric IrMnSn

P.,

Mukherjee

2024

Phys. Rev. B

View full text Add to dashboard Cite

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Coexistence of antiferromagnetism and glassy magnetic state and signature of quantum interference effects in the frustrated ternary silicides HoScSi and ErScSi

Cited by 1 publication

References 82 publications

Carrier localization induced by electron-electron interaction and its impact on the electrical transport and magnetic properties of nonstoichiometric IrMnSn

Carrier localization induced by electron-electron interaction and its impact on the electrical transport and magnetic properties of nonstoichiometric IrMnSn

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