Coexistence of bunching and meandering instability in simulated growth of 4H-SiC(0001) surface

Krzyżewski, Filip; Załuska‐Kotur, Magdalena A.

doi:10.1063/1.4881816

Cited by 34 publications

(23 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We believe that such relations can be found soon and that they are also true for real crystal surfaces. Our model is easily generalizable to higher dimensions where new phenomena are expectedbunching of straight steps, step meandering of equidistant steps and simultaneous step bunching and meandering [4,31,32].…”

Section: Discussionmentioning

confidence: 99%

Step bunching and macrostep formation in 1D atomistic scale model of unstable vicinal crystal growth

Krzyżewski

Załuska‐Kotur

Krasteva

et al. 2017

Journal of Crystal Growth

View full text Add to dashboard Cite

Abstract. We devise a new 1D atomistic scale model of vicinal growth based on Cellular Automaton. In it the step motion is realized by executing the automaton rule prescribing how adatoms incorporate into the vicinal crystal. Time increases after each rule execution and then n DS diffusional updates of the adatoms are performed. The increase of n DS switches between the diffusion-limited (DL, n DS =1) and kinetics-limited (KL, n DS >> 1) regimes of growth. We study the unstable step motion by employing two alternative sources of instability -biased diffusion and infinite inverse Ehrlich-Schwoebel barrier (iiSE). The resulting step bunches consist of steps but also of macrosteps since there is no step-step repulsion incorporated explicitly into the model. This complex pattern formation is quantified by studying the time evolution of the bunch size N and macrostep size N m in order to find the proper parameter combinations that rescale the time and thus to obtain the full time-scaling relations including the pre-factors. For the case of biased diffusion the time-scaling exponent β of N is 1/2 while for the case of iiSE it is 1/3. In both cases the time-scaling exponent β m of N m is ~3β/4 in the DL regime and 3β/5 in the KL one.

show abstract

Section: Discussionmentioning

confidence: 99%

Step bunching and macrostep formation in 1D atomistic scale model of unstable vicinal crystal growth

Krzyżewski

Załuska‐Kotur

Krasteva

et al. 2017

Journal of Crystal Growth

View full text Add to dashboard Cite

show abstract

“…Because surface phenomena are complex, we adopt the strategy of divide-and-conquer to study them step-by-step. To clearly observe the effects of the change due to component deviation in the ambient phase at equilibrium, we do not consider the second-nearest-neighbor interaction between atoms [51] in crystals, the Ehrlich-Schwoebel effect [52,53], elastic interactions [54], surface reconstruction [14], and point-contact-type step-step attraction [2].…”

Section: Introductionmentioning

confidence: 99%

Surface Roughness Changes Induced by Stoichiometric Deviation in Ambient Phase for Two-Component Semiconductor Crystals

2020

View full text Add to dashboard Cite

The effects of a deviation in the fraction of the components in the ambient phase of a stoichiometric AB compound, such as GaN or SiC crystals, on the surface roughness and step self-assembly and disassembly on a vicinal surface are studied using the Monte Carlo method based on a staggered restricted solid-on-solid (st-RSOS) model at equilibrium. The (001) and (111) surfaces are typical examples of non-polar and polar surfaces, respectively. Although a stoichiometric deviation of the ambient phase does not affect the surface energy of a non-polar surface, it affects that of polar surfaces such as the (111) A and (111) B surfaces. We found that the vicinal surface of an AB compound is atomically smooth and globally rough. Globally, the vicinal surface is not affected by a stoichiometric deviation in the ambient phase. In contrast, in a small area, the structure of the vicinal surface is affected by a stoichiometric deviation in the ambient phase. The vicinal surface consists of local double and quadruple steps. The characteristic length L MFL , which separates the global length scale region and the local length scale region, has a maximum value of 156a in the present study, where a is the lattice constant. When temperature decreases, L MFL can become large.

show abstract

“…4E). It is known that ISB usually induces step bunching during crystal growth processes [1,10,11,17]. ISB also slows down nucleation at terraces, because it hinders the jumping of particles to neighboring sites.…”

Section: Stability Diagramsmentioning

confidence: 99%

“…[17]. The model was used in GaN N-plane simulations [18] where experimental results were compared with simulated ones and several methods of surface smoothening were proposed.…”

Section: Numerical Modelmentioning

confidence: 99%

Stability diagrams for the surface patterns of GaN(0001¯) as a function of Schwoebel barrier height

Krzyżewski

Załuska‐Kotur

2017

Journal of Crystal Growth

Self Cite

View full text Add to dashboard Cite

Coexistence of bunching and meandering instability in simulated growth of 4H-SiC(0001) surface

Abstract: Articles you may be interested inInfluence of the surface morphology on the channel mobility of lateral implanted 4H-SiC(0001) metal-oxidesemiconductor field-effect transistors

Cited by 34 publications

References 47 publications

Step bunching and macrostep formation in 1D atomistic scale model of unstable vicinal crystal growth

Step bunching and macrostep formation in 1D atomistic scale model of unstable vicinal crystal growth

Surface Roughness Changes Induced by Stoichiometric Deviation in Ambient Phase for Two-Component Semiconductor Crystals

Stability diagrams for the surface patterns of GaN(0001¯) as a function of Schwoebel barrier height

Contact Info

Product

Resources

About