Coexistence of fast and slow luminescence in three-dimensional<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Si</mml:mi><mml:mo>∕</mml:mo><mml:msub><mml:mi>Si</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi>Ge</mml:mi><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>nanostructures

Kamenev, B. V.; Tsybeskov, L.; Baribeau, J.‐M.; Lockwood, D. J.

doi:10.1103/physrevb.72.193306

Cited by 56 publications

(60 citation statements)

References 24 publications

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“…It is observed that the thermal diffusion and the conduction current densities describe very well the forward current characteristics of the MQW photodetector. The recombination current density and tunneling band-to-band current density contributions to the reverse bias current are Electron carrier recombination lifetime ni τ 9 µs [27] Electron carrier recombination lifetime pi τ 9 µs [27] Electron carrier mobility…”

Section: Resultsmentioning

confidence: 99%

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Sfina¹,

Yahyaoui²,

Saïd³

et al. 2014

MNSMS

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stack consists in a W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR) photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature (RT) in the range 1.3 -1.55 μm. The electron transport in the Si/Si 1−x Ge x /Si multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. These processes were modeled with a system of Schrödinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence of zero-bias resistance area product (R 0 A) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.

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Section: Resultsmentioning

confidence: 99%

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Sfina¹,

Yahyaoui²,

Saïd³

et al. 2014

MNSMS

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“…We have applied this theoretical model to study Si/Si 1-x Ge x core-shell quantum wires. It has been shown in previous papers that for lower Ge concentrations this heterostructure exhibits a type-I confinement for electrons, but a type-I to type-II transition occurs as the Ge concentration x increases (Kamenev et al, 2005). Then, in this work we study both types of confinement, for the appropriate Ge concentrations in each case.…”

Section: Core-shell Quantum Wiresmentioning

confidence: 87%

Quantum Confinement in Heterostructured Semiconductor Nanowires with Graded Interface

Farias¹,

Sousa²,

Chaves³

2010

Nanowires

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Where m and m ⊥ are the in-plane and longitudinal effective masses, respectively, andis the cyclotron frequency. In core-shell wires, we consider a potential V which includes not only the heterostructure, but also the electron-hole Coulomb potential. For the zinc-blend materials we studied, the valence band presents heavy and light hole states and, since in block-by-block wires the charge carriers are confined in three dimensions, the valence band states cannot be discussed in terms of a single hole state and a multi-band k.p study is necessary in this case. Hence, in this work we study excitonic effects only for core-

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“…3 Carrier recombination In discussing carrier recombination in Si/SiGe NSs, we focus on MBE and CVD grown samples with an average Ge atomic composition ~50%. These samples show the highest observed PL quantum efficiency with a PL peak wavelength close to 1.5-1.6 m. The PL spectral distribution extending well below the bandgap of pure Ge and the extremely long carrier radiative lifetime of ~10 ms [11], as well as the ~30 meV per decade PL spectral shift toward higher photon energies as the excitation intensity increases, point out strong similarities between the PL in 3D Si/SiGe NSs and the PL in III-V quantum wells with type II energy band alignment [15]. Generally, a type II energy band alignment at the heterointerface is a strong disadvantage for light emitting devices due to a weak overlap between spatially separated electron and hole wave functions.…”

Section: Invited Articlementioning

confidence: 90%

“…shown that 3D Si/SiGe NSs exhibit an extremely long (~10 -2 s) luminescence lifetime [11], which is of the order of a million times longer than in III-V semiconductors and their NSs. Thus, according to this analysis, 3D Si/SiGe NSs cannot be used to achieve efficient and commercially valuable light emitting devices.…”

Section: Invited Articlementioning

confidence: 99%

Self‐assembled silicon‐germanium nanostructures for CMOS compatible light emitters

Lockwood

Tsybeskov

2011

Phys. Status Solidi C

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To be commercially valuable, light emitters based on SiGe nanostructures should be efficient, fast, operational at room temperature, and be compatible with the CMOS technology. Also, the emission wavelength should match the optical waveguide low‐loss spectral region of 1.3–1.6 μm. Among other approaches, epitaxially‐grown Si/SiGe quantum dot/quantum well complexes produce efficient photoluminescence and electroluminescence in the required spectral range. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency and a long carrier radiative lifetime. The latest progress in the understanding of physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters for on‐chip optical interconnects is proposed. © Her Majesty the Queen in Right of Canada [2011]. Reproduced with the permission of the Minister of Industry

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Coexistence of fast and slow luminescence in three-dimensionalSi∕Si1−xGexnanostructures

Cited by 56 publications

References 24 publications

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

Quantum Confinement in Heterostructured Semiconductor Nanowires with Graded Interface

Self‐assembled silicon‐germanium nanostructures for CMOS compatible light emitters

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