The presence of oxygen vacancies is unavoidable in many metal complex oxide materials such as hexaferrite. So, this article investigates the role of crystal defects such as oxygen vacancies, and different oxidation states of Fe ions on electrical conduction behaviours of Al3+ substituted Ba0.4La0.1Sr0.5AlxFe12-xO19 hexaferrite by analyzing temperature dependents AC impedance, and AC conductivity. The optimal substitution of La3+ ions and high-temperature sintering is responsible for forming oxygen vacancies while reducing Fe into Fe3+ to Fe2+ cations, observed in structural and XPS analysis, which affects electrical conduction behaviours. The departure from ideal Debye-type relaxation behavior is also one of the effects of crystal defects. Temperature variation relaxation time observed a sharps change at around 403K. This may be due to different electrical entities influence the mode of electron hopping with the temperature. The activation energy calculated from the temperature dependents relaxation time confirmed the presence of the electron hopping through bridging effects of the first ionization of oxygen vacancies Fe2+-V^.o- Fe3+ below temperature 403K. Whereas, above 403K, electron hopping through different oxidation states of Fe2+ + e → Fe3+ and migration of oxygen vacancies toward the bulk surface are responsible for the conduction mechanism. The DC resistivity and AC conductivity briefs that the bridging effects of oxygen defects can also induce Coulombic interaction between the defects sites resulting in Efros-Shklovskii-Variable-Ranges hopping (ES-VRH) and Correlation-Barrier hopping (CBH) below temperature 403K. Above 403K, polaron-assisted electron hopping is more desirable, as confirmed by Non-Overlapping Small Polaron Tunnelling (NSPT)model.