2010
DOI: 10.1016/j.jcrysgro.2010.03.038
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Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy

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Cited by 14 publications
(6 citation statements)
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“…42 Konaka et al similarly discuss the slight suppression of phase-separation in InGaAsP at 630 C in the presence of ordering. 43 This can be understood by introducing the sub-surface strain energy from the dimerization process into the free energy term used to calculate the miscibility gap. Our experiments showing both phaseseparation and ordering at 650 C imply that the miscibility gap was not lowered enough by ordering.…”
Section: Cupt-b Orderingmentioning
confidence: 99%
“…42 Konaka et al similarly discuss the slight suppression of phase-separation in InGaAsP at 630 C in the presence of ordering. 43 This can be understood by introducing the sub-surface strain energy from the dimerization process into the free energy term used to calculate the miscibility gap. Our experiments showing both phaseseparation and ordering at 650 C imply that the miscibility gap was not lowered enough by ordering.…”
Section: Cupt-b Orderingmentioning
confidence: 99%
“…Atomic ordering was evaluated by TED 24) measurement for selected areas of InGaP layers as shown in Fig. 2.…”
Section: Resultsmentioning
confidence: 99%
“…Using XRD, we confirmed the As content y was 0.43 for all cells, because the difference in the adsorption efficiencies of P 2 and As 2 in the temperature range used here was negligible. 22) Figure 4 plots the following parameters of the In 0.81 Ga 0.19 As 0.43 P 0.57 solar cells as a function of T InGaAsP : η, short circuit current density (J SC ), open circuit voltage (V OC ), fill factor (FF), and integral PL intensity at RT. Although roughly identical J SC and FF values of 36 mA=cm 2 and 0.62, respectively, were obtained for all cells, the V OC was strongly affected by T InGaAsP .…”
Section: Resultsmentioning
confidence: 99%
“…By contrast, the reduction in V OC for the cell grown at 450 °C is presumably attributed to an increase in local compositional fluctuations. The studies on In x Ga 1−x As y P 1−y thin films grown by liquid phase epitaxy, 23,24) MOCVD 22) and gas-source MBE 25) argue that the films tend to increase both lateral and vertical compositional modulations owing to surface undulation and=or phase separation.…”
Section: Resultsmentioning
confidence: 99%