The preparation of durable and efficient photoanodes for photoelectrochemical water oxidation is of great importance in promoting the development of green hydrogen production and artificial photosynthesis. Here, n-type BiVO 4 was combined with p-type CuI to construct a CuI/BiVO 4 (CIB-1) p−n heterojunction photoanode. The composite photoanode effectively overcame the drawbacks of BiVO 4 , such as low separation and injection efficiency of photogenerated electron−hole pairs. As a result, the CIB-1 had the highest photocurrent density of 1.98 mA cm −2 , which was 2.5 times higher than pure BiVO 4 with 0.79 mA cm −2 at 1.23 V (vs RHE) under AM 1.5G light irradiation. The CIB-1 had a lower Tafel slope of 23.2 mV decade −1 compared to 47.9 mV decade −1 for BiVO 4 , so the water oxidation kinetics was remarkably advanced over CuI/BiVO 4 . Based on DFT calculations, the OER overpotential of 0.480 V for CuI/BiVO 4 was significantly lower than that of 1.546 V for BiVO 4 due to the lower free energy from OH − to oxygen over CuI/BiVO 4 compared to BiVO 4 .