Coherence in defect evolution data for the ion beam irradiated graphene

Yeo, Sunmog; Han, Jinkyu; Bae, Sukang; Lee, Dong Su

doi:10.1038/s41598-018-32300-w

Cited by 6 publications

(8 citation statements)

References 31 publications

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“…There are contradicting reports for similar experiments, while some claim that the maximum value is independent of the mass of irradiating ion, 33,36 others agree with our observation, that is, that the lighter ions give greater maximum value of I D / I G . 34,70 There are couple of subtleties worthy of mentioning. The yield of defects and the corresponding maximum value of I D /I G increase for graphene on a substrate due to production of secondary energetic species, not like in our case with suspended graphene.…”

Section: Resultsmentioning

confidence: 99%

“…Raman spectroscopy is a more convenient technique for fast and statistically representative characterization of defects in various graphene samples. It is nondestructive and very useful in characterization of carbon materials. − ,− Representative Raman spectra for pristine graphene and samples treated with plasmas and ion beams are shown in Figure d. The spectrum of pristine graphene has the characteristic G peak (equivalent to E 2g peak in benzene) around ∼1585 cm –1 and the second harmonic 2D peak at around ∼2640 cm –1 .…”

Section: Resultsmentioning

confidence: 99%

“…Defects/pores in the graphene lattice can be generated ex situ by using high-energy ion − or electron − beams and different types of plasma. ,− Alternatively, the defects can be introduced in situ during growth, for example, through interdomain boundaries via intentionally making low-size domains or via substituting some carbons for other elements (doping) . The type of ex situ defects produced by irradiating particles depends on their mass, energy, the incident angle, and potentially the exposure time/flux as well. ,, The ion or electron beam allows control of the particles’ energy and direction.…”

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confidence: 99%

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Ionic Conductance through Graphene: Assessing Its Applicability as a Proton Selective Membrane

et al. 2019

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Inspired by recent reports on possible proton conductance through graphene, we have investigated the behavior of pristine graphene and defect engineered graphene membranes for ionic conductance and selectivity with the goal of evaluating a possibility of its application as a proton selective membrane. The averaged conductance for pristine chemical vapor deposited (CVD) graphene at pH1 is ∼4 mS/cm 2 but varies strongly due to contributions from the unavoidable defects in our CVD graphene. From the variations in the conductance with electrolyte strength and pH, we can conclude that pristine graphene is fairly selective and the conductance is mainly due to protons. Engineering of the defects with ion beam (He + , Ga + ) irradiation and plasma (N 2 and H 2 ) treatment showed improved areal conductance with high proton selectivity mostly for He-ion beam and H 2 plasma treatments, which agrees with primarily vacancy-free type of defects produced in these cases confirmed by Raman analysis.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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confidence: 99%

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Ionic Conductance through Graphene: Assessing Its Applicability as a Proton Selective Membrane

et al. 2019

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“…There are many ways to introduce a disorder experimentally: by bombarding graphene with heavy atoms [38], by fluorination [39], or by creating macroscopical defects, e.g., artificial holes [40]. Theoretically, one classifies disorder with respect to the reflection symmetry related to the top and bottom surfaces of a membrane.…”

Section: The Modelmentioning

confidence: 99%

Phase diagram of a flexible two-dimensional material

Saykin

Kachorovskii

Burmistrov

2020

Phys. Rev. Research

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Transport and elastic properties of freestanding two-dimensional materials are determined by competition between dynamical and quenched out-of-plane deformations, i.e., between flexural phonons and ripples, respectively. They both tend to crumple the system by overcoming the strong anharmonicity which stabilizes the flat phases. Despite active research, it still remains unclear whether the rippled phase exists in the thermodynamic limit or is destroyed by thermal out-of-plane fluctuations. We demonstrate that a sufficiently strong short-range disorder stabilizes ripples, whereas in the case of a weak disorder the thermal flexural fluctuations dominate in the thermodynamic limit. Therefore the phase diagram of a flexible two-dimensional material with a quenched short-range disorder has four distinct phases. These phases have drastically different elastic and transport properties that are of crucial importance for the emergent field of flexible nanoelectronics.

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“…Disorder. -There are many ways to introduce a disorder experimentally: by bombarding graphene with heavy atoms [39], by fluorination [40], or by creating macroscopical defects, e.g. artificial holes [41].…”

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Disorder-induced rippled phases and multicriticality in free-standing graphene

Saykin,

Kachorovskii,

Burmistrov

2020

Preprint

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One of the most exciting phenomena observed in crystalline disordered membranes, including a suspended graphene, is rippling, i.e. a formation of static flexural deformations. Despite an active research, it still remains unclear whether the rippled phase exists in the thermodynamic limit, or it is destroyed by thermal fluctuations. We demonstrate that a sufficiently strong short-range disorder stabilizes ripples, whereas in the case of a weak disorder the thermal flexural fluctuations dominate in the thermodynamic limit. The phase diagram of the disordered suspended graphene contains two separatrices: the crumpling transition line dividing the flat and crumpled phases and the rippling transition line demarking the rippled and clean phases. At the intersection of the separatrices there is the unstable, multicritical point which splits up all four phases. Most remarkably, rippled and clean flat phases are described by a single stable fixed point which belongs to the rippling transition line. Coexistence of two flat phases in the single point is possible due to non-analiticity in corresponding renormalization group equations and reflects non-commutativity of limits of vanishing thermal and rippling fluctuations.

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Coherence in defect evolution data for the ion beam irradiated graphene

Cited by 6 publications

References 31 publications

Ionic Conductance through Graphene: Assessing Its Applicability as a Proton Selective Membrane

Ionic Conductance through Graphene: Assessing Its Applicability as a Proton Selective Membrane

Phase diagram of a flexible two-dimensional material

Disorder-induced rippled phases and multicriticality in free-standing graphene

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