Coherent longitudinal acoustic phonon
(CAP) generation
in epitaxial
Dirac semimetal Cd3As2 films with different
thicknesses was investigated by a time-resolved reflectance technique.
The short-lived weak CAP oscillations can be observed only in the
thicker Cd3As2 films, and their central frequency
of 0.039 THz has no dependence on sample thickness, but is nearly
inversely proportional to the probe wavelength. For the 20 nm thin
film, the observed long-lived CAP with a central frequency of 0.049
THz is generated in the GaAs(111)B substrate underneath. A sound velocity
of 3800 m/s for the Cd3As2 film and 5360 m/s
for the GaAs(111)B substrate is thus deduced. In addition, the opposite
CAP amplitude and lifetime dependence on temperature further confirms
the electronic and thermal stress origination of CAP generated in
GaAs(111)B and Cd3As2 film, respectively, based
on the propagating strain pulse model. The central frequency of CAP
is found to be stable with increasing pumping fluence and temperature,
which makes Cd3As2 a potential material for
thermoelectric device applications.