Coherent electron backscattering interference in non-uniform disordered systems

Chang, Liang-Cheng; Wu, George

doi:10.1016/j.physb.2011.04.071

Cited by 1 publication

(1 citation statement)

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“…Several distinct theories aiming in addressing this sophisticated problem, while without invoking a magnetic origin, have recently been formulated by, among others, Zawadowski et al, 50 Imry et al, 51 Galperin et al, 52 Golubev and Zaikin, 53 Dóra and Gulásci, 54 Rotter and coworkers, 55 and Chang and Wu. 56 In particular, Imry et al 51 have proposed that a very weakly temperature dependent dephasing rate in some T interval at low temperatures can arise from specific structural defects in the samples. Indeed, experimental observations of a finite τ 0 ϕ sensitively associated with metallurgical properties have been reported on a good number of as-prepared 38 as well as thermally treated metal films.…”

Section: Disorder Dependence Of Small-energy-transfer Electron-electr...mentioning

confidence: 99%

Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films

Lin

Zhang

et al. 2012

Phys. Rev. B

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The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3-90 K. We found that the small-energy-transfer electron-electron (e-e) scattering process dominated the dephasing from a few K to several tens K. At higher temperatures, a crossover to the large-energy-transfer ee scattering process was observed. Below about 1-2 K, the dephasing time τϕ revealed a very weak temperature dependence, which intriguingly scaled approximately with the inverse of the electron diffusion constant D, i.e., τϕ(T ≈ 0.3 K) ∝ 1/D. Theoretical implications of our results are discussed. The reason why the electron-phonon relaxation rate is negligibly weak in this lowcarrier-concentration material is presented.

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