2004
DOI: 10.1016/j.matlet.2004.07.005
|View full text |Cite
|
Sign up to set email alerts
|

Coherent growth and superhardness effect of AlN/TiN nanomultilayers

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
6
0

Year Published

2009
2009
2020
2020

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 28 publications
(6 citation statements)
references
References 18 publications
0
6
0
Order By: Relevance
“…In order to evaluate the SPP at interfaces involving TiN as a conductor, we initially consider the TiN/AlN interface. We base this choice upon the structural and chemical compatibility of the conducting fcc B1-TiN(111) and the dielectric hcp w-AlN(0001) (note that the fundamental gap of AlN is 6.2 eV [ 146 ]) surfaces that result in stable and sharp TiN/AlN interfaces [ 147 , 148 , 149 , 150 , 151 , 152 , 153 ]. The most characteristic description of the SPP across the interface is via the dispersion relation that correlates the frequency of light ω with the wave vector k x in the direction of propagation of SPP.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…In order to evaluate the SPP at interfaces involving TiN as a conductor, we initially consider the TiN/AlN interface. We base this choice upon the structural and chemical compatibility of the conducting fcc B1-TiN(111) and the dielectric hcp w-AlN(0001) (note that the fundamental gap of AlN is 6.2 eV [ 146 ]) surfaces that result in stable and sharp TiN/AlN interfaces [ 147 , 148 , 149 , 150 , 151 , 152 , 153 ]. The most characteristic description of the SPP across the interface is via the dispersion relation that correlates the frequency of light ω with the wave vector k x in the direction of propagation of SPP.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, Figure 7 demonstrates the SPP dispersion relations at TiN/Dielectric interfaces for various popular dielectrics and for a highly conductive, low-loss TiN film. Air can hardly sustain a SPP mode, while the SPP is stronger and gets bigger extreme k x values with increasing the dielectric constant of the dielectric material; of special importance is the exceptional SPP performance across the TiN/AlN and TiN/GaN interfaces which are exceptionally stable and sharp [ 18 , 147 , 148 , 149 , 150 , 151 , 152 , 153 ]. Note, however, that SPP-based devices using the TiN/GaN interface are limited to a photon energy range below 3.45 eV, which is the direct fundamental gap of GaN.…”
Section: Resultsmentioning
confidence: 99%
“…Since these pioneering works large efforts to understand the stabilization effect [10,87,88] and to further optimize the TiN/AlN superlattice architecture and properties [89][90][91] have been made until today. It is state-of-the-art knowledge that a superlattice effect (i.e.…”
Section: Stabilization Effects In Nitride Multilayer Systemsmentioning
confidence: 99%
“…Furthermore, SL architecture can enable formation of metastable phases, otherwise rather uneasy to synthesise experimentally. The application higly relevant cubic AlN, for instance, was shown to be epitaxially stabilised in AlN/CrN 6,7 or AlN/TiN [8][9][10] SLs.…”
Section: Introductionmentioning
confidence: 99%