Coherent Light Emission from GaAs Junctions

Hall, R. N.; Fenner, G. E.; Kingsley, J. D.; Soltys, T. J.; Carlson, R. O.

doi:10.1016/b978-0-08-013320-1.50022-1

Cited by 28 publications

(33 citation statements)

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“…Moreover, other semiconductors give off light when electrons and holes recombine. For example, gallium arsenide (GaAs), gallium phosphide (GaP), and aluminum phosphide (AlP) [3] [4], which are made into the LEDs used as displays in digital devices. Those same materials can be shaped to form a reflecting cavity that directs the light it produces, creating a semiconductor laser.…”

Section: Conventional Semiconductorsmentioning

confidence: 99%

“…By using equations (2-18b) and (2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19), an expression for absorption coefficient in terms of the bandgap energy is found by [115] ℎ…”

Section: X-ray Diffractionmentioning

confidence: 99%

“…6 is the reflectivity simulation of ZnO film growth with equation(2)(3)(4)(5)(6)(7)(8)(9). The experimental data (blue circle) was well simulated by equation(2)(3)(4)(5)(6)(7)(8)(9) with the growth rate g = 0.075 nm/s, and index of refraction q , = 2.04 + 0.01i. , = 2.04 is close to the 2.05 in reference[99].Furthermore, the film's thickness d can be calculated by d = gt, where t is growth time.…”

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confidence: 99%

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Bandgap tunable Zn3-3Mg3N2 alloy for earth-abundant solar absorber

Cao

Tiedje

et al. 2019

Materials Letters

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Zinc nitride and magnesium nitride are examples of the relatively unexplored II3V2 group of semiconductor materials. These materials have potential applications in the electronics industry due to their excellent optical and electrical properties. This study mainly focuses on the growth and characterization of the new semiconductor materials: zinc nitride, magnesium nitride, and their alloys. The (100) oriented zinc nitride thin films were grown on both (110) sapphire substrates and (100) MgO substrates by plasma-assisted molecular beam epitaxy (MBE). The typical growth rate is in the range of 0.02-0.06 nm/s, the growth temperature is in the range of 140-180 o C, and background nitrogen pressure is around 10-5 Torr. The growth process was monitored by in-situ: reflection high energy electron diffraction (RHEED) and optical reflectivity. The RHEED and X-ray diffraction patterns of the zinc nitride indicates that the film is a single crystal material. The in-situ optical reflectivity pattern of the zinc nitride shows interference oscillations, and these oscillations are damped out as the thickness increases. The reflectivity as a function of time was accurately simulated by an optical equation. The optical constants of the thin films, the growth rate, and the thickness were derived from the simulation of the in-situ reflectance. The X-ray diffraction shows that (400) oriented zinc nitride thin films were grown on both A-plane iv (110) sapphire substrates and (100) MgO substrates. Optical transmittance measurements were performed on the zinc nitride thin films. The spectrum of the zinc nitride transmittance indicates that zinc nitride has a high optical absorption in the visible light region. The absorption coefficient was calculated from the transmittance spectrum, and the optical band gap of the zinc nitride thin film was found to be 1.25-1.28 eV. Ellipsometry measurements suggested that the refractive index of zinc nitride is 2.3-2.7, and the extinction coefficient is ~0.5-0.7 in the energy range 1.5-3.0 eV. The electron transport measurement shows that the single crystal zinc nitride has a mobility as high as 395 cm 2 /Vs. A plasma-assisted MBE system was employed for magnesium nitride growth. The growth temperature was in the range of 300-350 o C. RHEED and laser reflectivity were employed during growth. The RHEED and X-ray diffraction patterns indicated that the epilayers are single crystal films. The optical laser reflectivity was well fitted by a modified optical equation. The optical constants and growth rate were derived from the simulation. X-ray diffraction showed that (400) oriented single crystal magnesium nitride films were grown on (100) MgO substrates. The optical transmittance spectra show that the magnesium nitride has a high absorption below 500 nm. The calculated absorption coefficient is as high as 4´10-4 cm-1 in the range of ~2.5-3.0 eV. The optical band gap was estimated to be ~2.5 eV. Ellipsometry measurements showed that the refractive index of the magnesium nitride is 2.3-2.75 and the extin...

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Section: Conventional Semiconductorsmentioning

confidence: 99%

Section: X-ray Diffractionmentioning

confidence: 99%

mentioning

confidence: 99%

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Bandgap tunable Zn3-3Mg3N2 alloy for earth-abundant solar absorber

Cao

Tiedje

et al. 2019

Materials Letters

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“…Ever since the invention of the GaAs laser in 1962 1 , the GaAs/AlGaAs material platform has been of significant importance for integrated optics. It is of particular interest as the high nonlinearity of the material make it ideal for nonlinear optical processing, where the femtosecond response time can be utilized for processing signals at speeds beyond a terabit-per-second in compact, power efficient devices 2 .…”

Section: Introductionmentioning

confidence: 99%

Supercontinuum generation in dispersion engineered AlGaAs-on-insulator waveguides

May

Clerici

Sorel

2021

Sci Rep

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The effect of engineering the dispersion of AlGaAs-on-insulator (AlGaAs-OI) waveguides on supercontinuum generation is investigated at telecom wavelengths. The pronounced effect the waveguide width has on the nonlinear dynamics governing the supercontinua is systematically analyzed and the coherence of the spectra verified with numerical simulations. Using dispersion engineered AlGaAs-OI waveguides, broadband supercontinua were readily obtained for pulse energies of $$\sim \text {3 pJ}$$ ∼ 3 pJ and a device length of only 3 mm. The results presented here, further understanding of the design and fabrication of this novel platform and describe the soliton and dispersive wave dynamics responsible for supercontinuum generation. This study showcases the potential of AlGaAs-OI for exploring fundamental physics and realizing highly efficient, compact, nonlinear devices.

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“…To understand the origin of such behaviour is an effort that continues today. Semiconductor lasers were developed in 1962 [3]. For the last 30 years they are widely used for transmission, recording and reading information, optical pumping.…”

Section: Introductionmentioning

confidence: 99%

Simulation and Qualitative Analysis of a Single Mode Semiconductor Laser Model

Baimenshina¹

2013

Proceedings of the International Conference on Computer, Networks and Communication Engineering (ICCNCE 2013)

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In this paper the dynamics of a single-mode semiconductor laser model is investigated. The nonlinear rate equations describe the dynamic evolution of semiconductor laser. We study transients occurring in the system using numerical simulation. A fourth order Runge-Kutta method is used to calculate two coupled first-order differential equations. Changes in the pumping parameter of the system can lead to drastic changes of the character of the solutions. Qualitative analysis of the system is used for investigating the typical bifurcations and allowed conditions for the existence of damped oscillations in the system.

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Coherent Light Emission from GaAs Junctions

Cited by 28 publications

References 1 publication

Bandgap tunable Zn3-3Mg3N2 alloy for earth-abundant solar absorber

Bandgap tunable Zn3-3Mg3N2 alloy for earth-abundant solar absorber

Supercontinuum generation in dispersion engineered AlGaAs-on-insulator waveguides

Simulation and Qualitative Analysis of a Single Mode Semiconductor Laser Model

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