Coherent plasmons in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-doped GaAs

Kersting, R.; Heyman, James; Strasser, G.; Unterrainer, K.

doi:10.1103/physrevb.58.4553

Cited by 103 publications

(63 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar excitation mechanism can be also applicable to the collective carrier excitation (plasmon) 7 [22,23], but it may take longer time than that for coherent LO phonons. As observed by Huber et al using THz technique, the formation of plasmon takes around one intrinsic period determined by the carrier density [13].…”

Section: Phenomenological Modelmentioning

confidence: 99%

Delayed formation of coherent LO phonon-plasmon coupled modes inn- andp-type GaAs measured using a femtosecond coherent control technique

Misochko

Goto

et al. 2012

Phys. Rev. B

View full text Add to dashboard Cite

Coherent control experiments using a pair of collinear femtosecond laser pulses have been carried out to manipulate longitudinal optical (LO) phonon-plasmon coupled (LOPC) modes in both p-and n-type GaAs. By tuning the interpulse separation, remarkably distinct responses have been observed in the two samples. To understand the results obtained a phenomenological model taking the delayed formation of coherent LOPC modes into account is proposed. The model suggests that the lifetime of coherent LOPC modes plays a key role and the interference of the coherent LO phonons excited successively by two pump pulses strongly affects the manipulation of coherent LOPC modes.

show abstract

Section: Phenomenological Modelmentioning

confidence: 99%

Delayed formation of coherent LO phonon-plasmon coupled modes inn- andp-type GaAs measured using a femtosecond coherent control technique

Misochko

Goto

et al. 2012

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…Impurity or photo-doping of semiconductors introduces free carrier plasmas in the valence and conduction bands with frequencies typically in the THz range, where it can couple with the optical phonons of comparable frequency. In polar semiconductors, the coherent collective oscillation of the lattice ions can couple with that of the free charge carrier plasma [19]; the coupling between them renormalizes their bare resonant frequencies and dephasing rates giving rise to a new set of free-carrier density-dependent coupled modes on the time scale of screening [2]. In some cases the carrier-lattice coupling is sufficiently strong to even induce phase transitions on femtosecond time scale [20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Ultrafast coupling of coherent phonons with a nonequilibrium electron-hole plasma in GaAs

et al. 2015

View full text Add to dashboard Cite

Abstract:We present a joint experimental-theoretical study of the coupling of coherent phonons in bulk GaAs with a nonequilibrium electron-hole plasma following photoexcitation at the E 1 gap by ultrafast laser pulses. In contrast to prior coherent phonon experiments where photoexcitation across the E 0 gap generated electrons in the Γ valley, for the E 1 gap excitation, the majority of the electrons are generated in the satellite L valleys. This leads to a drastically different situation from the previous studies where the damping of electrons is faster due to the higher scattering rates in the L valley and in addition, the diffusion of carriers has a significant effect on the plasma response due to the shorter optical absorption depth of the pump-probe light. Reflectivity measurements show coherent phonon-plasmon oscillations, whose frequencies are indicative of the heavy damping, which leads to coupled-mode frequencies that lie between the transverse and longitudinal optical phonon frequencies and change with time due to the diffusion of the plasma. We analyze the experimental data with a theoretical model that describes the time and densitydependent coupling of the coherent phonon and the electron-hole plasma as the photoexcited carriers diffuse into the sample on a sub-picosecond time scale. The calculated phonon-plasmon dynamics qualitatively reproduce the experimentally observed time-dependent frequency.

show abstract

“…The central photon energy is 1.55 eV. At this photon energy, the light absorption coefficients α in GaAs and InAs are 1.25 × 10 4 cm -1 [21] and 7.0 × 10 4 cm -1 [22], respectively.…”

Section: Models Of Gaas and Inas Emittersmentioning

confidence: 99%

Oscillations of electron–hole plasma in terahertz emitters

Reklaitis¹

2016

Lith. J. Phys.

View full text Add to dashboard Cite

Oscillations of photogenerated electron-hole plasma in freestanding terahertz emitters are studied using the hydrodynamic analysis and Monte Carlo simulations. The pronounced plasma oscillations are obtained in an n-GaAs emitter in which the oscillations are initiated by the surface electric field. The plasma oscillations are also found in an n-InAs emitter in which the oscillations are induced by the photo-Dember effect.

show abstract

Coherent plasmons inn-doped GaAs

Cited by 103 publications

References 24 publications

Delayed formation of coherent LO phonon-plasmon coupled modes inn- andp-type GaAs measured using a femtosecond coherent control technique

Delayed formation of coherent LO phonon-plasmon coupled modes inn- andp-type GaAs measured using a femtosecond coherent control technique

Ultrafast coupling of coherent phonons with a nonequilibrium electron-hole plasma in GaAs

Oscillations of electron–hole plasma in terahertz emitters

Contact Info

Product

Resources

About