2019
DOI: 10.1021/acs.nanolett.9b00205
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Coherent Resonant Tunneling through Double Metallic Quantum Well States

Abstract: Study of resonant tunneling through multi-metallic quantum well (QW) structure is not only important for the fundamental understanding of quantum transport, but also for the great potential to generate advanced functionalities of spintronic devices. However, it remains challenging to engineer such structure due to the short electron phase coherence length in metallic QW system. Here, we demonstrate the successful fabrication of double-QW structure in a single fully epitaxial MTJ heterostructure, where two Fe Q… Show more

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Cited by 30 publications
(24 citation statements)
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“…A control stack MgO(001)//MgO (10 nm)/Fe (45 nm)/MgO (2.5 nm)/Fe 4 N (3 nm)/Co (20 nm)/Au (10 nm) was also deposited through a similar procedure. More detailed MTJ growth can be found elsewhere. ,, …”
Section: Methodsmentioning
confidence: 99%
“…A control stack MgO(001)//MgO (10 nm)/Fe (45 nm)/MgO (2.5 nm)/Fe 4 N (3 nm)/Co (20 nm)/Au (10 nm) was also deposited through a similar procedure. More detailed MTJ growth can be found elsewhere. ,, …”
Section: Methodsmentioning
confidence: 99%
“…Recently, insertion of a double tunneling barrier in a double MTJ has led to the formation of a resonant tunnelling junction, which showed TMR oscillation for the FM layer thickness up to 12 nm [411]. More recently, quantum resonant tunneling has been observed in a double MTJ incorporating a double quantum well [412]. In recent years spintronics has branched off into new areas by merging with various ancillary fields, namely magnon spintronics [413], spin-orbitronics [414],…”
Section: 𝑛 𝑚𝑎𝑗 +𝑛 𝑚𝑖𝑛mentioning
confidence: 99%
“…Magnetic memory devices, based on densely packed magnetic nanoelements, could be a breakthrough in computational technologies due to their undeniable advantages, such as nonvolatility, economic efficiency, speed, and endurance. [1,2] Successful creation of such devices requires the solution of several inherent problems, one of which is determining the influence of magnetostatic fields created by magnetic elements on their neighbors. [3] Since this influence in the array can extend over distances up to 100 µm, [4] it could drastically affect the magnetic properties of one memory cell and a whole device.…”
Section: Introductionmentioning
confidence: 99%