2008
DOI: 10.1103/physrevb.77.224110
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Coherent shear phonon generation and detection with picosecond laser acoustics

Abstract: Measurements on a film of silica on crystalline zinc using picosecond laser acoustics are theoretically analyzed to quantitatively explain the generation and detection of picosecond shear and longitudinal-acoustic waves. The theory encompasses the scattering of obliquely incident probe light of arbitrary polarization by a depth-dependent anisotropic permittivity modulation in a multilayer, including terms arising from the photoelastic effect, interface displacements, and local rotations. Sound velocities, ultr… Show more

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Cited by 65 publications
(63 citation statements)
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References 48 publications
(64 reference statements)
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“…In the experiments, we do not see any resonant effects at the B values that correspond to the resonance of f M being equal to the frequency of localized TA phonons. This is not surprising because the optical pump excitation does not excite shear strain and correspondingly TA phonons in the present high symmetry geometry [27,28]. However, we could expect the generation of LA and TA phonons from the magnetization precession, as has been observed in conventional microwave-driven magnetoacoustic experiments [29].…”
Section: Resonant Driving Of Magnetization Precession Physical mentioning
confidence: 71%
“…In the experiments, we do not see any resonant effects at the B values that correspond to the resonance of f M being equal to the frequency of localized TA phonons. This is not surprising because the optical pump excitation does not excite shear strain and correspondingly TA phonons in the present high symmetry geometry [27,28]. However, we could expect the generation of LA and TA phonons from the magnetization precession, as has been observed in conventional microwave-driven magnetoacoustic experiments [29].…”
Section: Resonant Driving Of Magnetization Precession Physical mentioning
confidence: 71%
“…In the beginning, we restrict our simulations to the photoelastic effect in the 100-nm GaN bulklike layer and the interface mechanism, since the complex index of refraction dispersion is known only for bulk material [20] but not for the QW. A model to calculate the reflectivity change ΔR normalized to the unperturbed value R 0 , which covers both effects, was developed before and is applied here to our experiment [12,21]. We use an input acoustic pulse like that shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…for the region of z < 0 and z 0 > 0 [21,30,39]. Δεz; t is, for the time being, assumed to be composed of a sum of the photoelastic contribution ε pe and the surface displacement contribution ε d .…”
Section: Theorymentioning
confidence: 99%