2000
DOI: 10.1002/1521-3951(200009)221:1<407::aid-pssb407>3.0.co;2-u
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Coherent Transfer and Electron Teleportation in Semiconductor Double Quantum Well

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Cited by 4 publications
(4 citation statements)
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“…4b is measured with HeNe laser (8 mWcm À2 ) excitation at À1:5 V dc biased condition, and Fig. 4b, the dephasing time is estimated to be 200 fs [6], similar to the previously reported value [10]. An extended interference oscillation is observed for delay time larger than 0.2 ps, which is not seen in the interferogram of the infrared light itself (Fig.…”
supporting
confidence: 85%
See 1 more Smart Citation
“…4b is measured with HeNe laser (8 mWcm À2 ) excitation at À1:5 V dc biased condition, and Fig. 4b, the dephasing time is estimated to be 200 fs [6], similar to the previously reported value [10]. An extended interference oscillation is observed for delay time larger than 0.2 ps, which is not seen in the interferogram of the infrared light itself (Fig.…”
supporting
confidence: 85%
“…

We explore electron transfer in double quantum well structures induced by femtosecond mid-infrared intersubband excitation. The possibility of coherent transfer of electrons by femtosecond intersubband excitations in CTDQWs has recently been proposed [5,6]. The process results in upconversion of the mid-infrared exciting light to near-infrared luminescence.

…”
mentioning
confidence: 99%
“…The idea of adiabatically transferring electrons in an electrical circuit appears to have originated around 2000/2001 [98][99][100]. These early works considered a STIRAP-like process to transfer a charge through a double quantum dot system, and as such differ qualitatively from the SAP schemes that we are concentrating on systems that do not utilize electromagnetic driving.…”
Section: Electronsmentioning
confidence: 99%
“…1,2,3,4,5,6,7,8,9,10,11,12,13 The progress of techniques in nanoscale lithography and the development of the free-electron lasers (FEL) 1 which can be continuously tuned in the terahertz (THz) range, have made possible the systematic study of effects only present in intense alternating fields in this domain. Examples of these effects are the coherent suppression of tunneling (or dynamic localization) despite interwell tunneling in the structure, 14,15,16,17 the collapse of minibands in superlattices, 18 absolute negative conductance, 3,19 and photon-assisted-tunneling (PAT) in resonant tunneling diodes, 20 the AC Stark Effect, 21 and many others.…”
Section: Introductionmentioning
confidence: 99%