Coherent x‐ray diffraction measurements of Cu thin lines

Abstract

1-µm-thick Cu thin lines with adjacent connections, which simulate via structures in large-scale integration circuits, were fabricated on Si 3 N 4 membranes by both electron-beam evaporation and a focused ion beam for coherent x-ray diffraction measurements. A direct current was applied to a Cu thin line to prepare an electromigration sample. In the scanning electron microscope image of the electromigration sample, a roughness of a few hundred nanometers was observed on the surface around the via structures. Coherent x-ray diffraction patterns of both the thin line and electromigration samples were measured using synchrotron x-rays at SPring-8. Characteristic diffraction patterns resulting from both the shape of the Cu thin lines and the defects around the via structures formed by the application of the current were observed.

Observation of electromigration in a Cu thin line by in situ coherent x-ray diffraction microscopy

“…The experimental setup for the CXDM measurements is similar to that described in our previous report. 35 Forward x-ray diffraction intensities were collected using an in-vacuum frontside-illuminated chargecoupled device ͑CCD͒ detector with a pixel size of 20 ϫ 20 m 2 that was placed 2.924 m downstream of the sample. Guard slits were used to suppress parasitic x rays scattered from the pinhole.…”

Development of Coherent X-ray Diffraction Microscopy Technique and Its Future Perspective: Toward Ultimate X-ray Structural Snalysis

“…(3) ，SnZn 共晶合金の組織解析 (4) ，Cu 細線中のエレ クトロマイグレーションのその場観察測定 (5) (14) ， Elastic Emission Machining 技術 (16)…”