Cold background infrared scene simulation device

Malyutenko, V. K.; Bogatyrenko, V. V.; Malyutenko, O. Yu.; Chyrchyk, S. V.

doi:10.1117/12.666557

Cited by 8 publications

(2 citation statements)

References 14 publications

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“…26,27 The two-dimensional free carrier distribution is shown in the image 3 that was obtained by subtracting the image 1 ͑initial state, the heating radiation is on͒ from the image captured 1 s after the cooling radiation is on so that T = constant. 3.…”

Section: Resultsmentioning

confidence: 99%

Radiative cooling of bulk Si by optical down-conversion

Malyutenko

Bogatyrenko

Malyutenko

2010

Journal of Applied Physics

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Size dependent optical properties of Si quantum dots in Si-rich nitride/Si3N4 superlattice synthesized by magnetron sputteringWe report on the radiative cooling of an indirect band gap semiconductor through its absorption of interband incoherent light and subsequent spontaneous emission of multiple longer-wavelength photons ͑optical down-conversion͒ in conditions when the energy deficit of the process is covered by the thermal energy. The 10ϫ 10ϫ 5 mm 3 Si slab kept at 473 K in an evacuated up to 10 −3 torr chamber was cooled by 3.8 K when pumped with light of 1.06 m wavelength. First-principles estimates and several advantages of the down-conversion approach over possible cooling of direct band gap semiconductors through the optical upconversion and negative luminescence are discussed.

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Section: Resultsmentioning

confidence: 99%

Radiative cooling of bulk Si by optical down-conversion

Malyutenko

Bogatyrenko

Malyutenko

2010

Journal of Applied Physics

Self Cite

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“…In ( Malyutenko et al, 2003;Malyutenko, Bogatyrenko et al, 2006) it was proposed to use a translucent plate of wide-gap semiconductor Ge or Si ( a screen ) as 2d radiation source, and a coordinate modulation of the emissivity to achieve by the intrinsic photoeffect. This heated screen was locally illuminated by light of the visible or near IR ranges.…”

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confidence: 99%