Cold exciton electroluminescence from air-suspended carbon nanotube split-gate devices

Higashide, N.; Yoshida, Masahiro; Uda, Tsuyoshi; Ishii, Akihiro; Kato, Yuichiro

doi:10.1063/1.4983278

Cited by 27 publications

(17 citation statements)

References 35 publications

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“…We derive an analytical expression for the minimum value of g (2) (0) attained at the low excitation power limit, which indicates that the purity of single photon emission can in principle be improved toward g (2) (0) ∼ 0 by reducing the excitation spot size within a long nanotube. Such a micron-scale platform for quantum light sources allows integration into electronic devices [40] or photonic structures [41], opening up a pathway to devices with additional functionality and flexibility.…”

Section: Discussionmentioning

confidence: 99%

Room-Temperature Single-Photon Emission from Micrometer-Long Air-Suspended Carbon Nanotubes

2017

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Statistics of photons emitted by mobile excitons in individual carbon nanotubes are investigated. Photoluminescence spectroscopy is used to identify the chiralities and suspended lengths of airsuspended nanotubes, and photon correlation measurements are performed at room temperature on telecommunication-wavelength nanotube emission with a Hanbury-Brown-Twiss setup. We obtain zero-delay second-order correlation g (2) (0) less than 0.5, indicating single photon generation. Excitation power dependence of the photon antibunching characteristics is examined for nanotubes with various chiralities and suspended lengths, where we find that the minimum value of g (2) (0) is obtained at the lowest power. The influence of exciton diffusion and end quenching is studied by Monte Carlo simulations, and we derive an analytical expression for the minimum value of g (2) (0). Our results indicate that mobile excitons in micron-long nanotubes can in principle produce high-purity single photons, leading to new design strategies for quantum photon sources. arXiv:1707.05435v1 [cond-mat.mes-hall]

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Section: Discussionmentioning

confidence: 99%

Room-Temperature Single-Photon Emission from Micrometer-Long Air-Suspended Carbon Nanotubes

2017

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“…This breakthrough was followed‐up immediately by the demonstration of a mobile recombination zone in a long channel (100 μm) single nanotube LEFET . Furthermore, efficient light emission by impact excitation in unipolar SWCNT transistors, from split‐gate devices and electrolyte‐gated transistors was later demonstrated.…”

Section: Lateral Single Layer and Ambipolar Lefetsmentioning

confidence: 99%

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Zaumseil

2019

Adv Funct Materials

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Light-emitting field-effect transistors (LEFETs) combine switching and amplification with light emission and thus represent an interesting optoelectronic device. They are not limited anymore to a few examples and specific materials but are nearly universal for a wide range of semiconductors, from organic to inorganic and nanoscale. This review introduces the basic working principles of lateral unipolar and ambipolar LEFETs and discusses recent examples based on various solution-processed semiconducting materials. Applications beyond simple light emission are presented and possible future directions for lightemitting transistors with added functionalities are outlined. The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201905269.thus excluding vertical LEFETs, which have been demonstrated for some organic emitter systems. [5][6][7] We will start with LEFETs that do not rely on the injection of both holes and electrons in a single semiconducting layer but show unipolar charge transport and may include multiple semiconducting layers. This short section will be followed by an overview of truly ambipolar single-layer LEFETs, the different possible working principles and various emissive semiconductors with their advantages and drawbacks. The review will conclude with recent examples of LEFET applications that go beyond simple light-emission and take advantage of specific device properties to add functionalities that are difficult to achieve with other optoelectronic devices.

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“…For further information, we refer the reader to the following comprehensive review that discusses SWCNT electroluminescence phenomena. [150] With this motivation, several groups have demonstrated the feasibility of electrically driven, monochiral SWCNT light emitters in a diverse range of applications including polarized light emission, [151] narrow linewidth emission, [152] voltage-controlled trion emission, [153] and near-infrared (near-IR) OLEDs. [154] To achieve narrow linewidth and polarized light emission, multiple studies have explored unique device architectures and SWCNT assembly.…”

Section: Electrically Driven Swcnt Optical Emittersmentioning

confidence: 99%

“…In this case, characterization of E 11 emission from (12,4) SWCNT devices shows EL linewidths as narrow as 8 meV, highlighting the importance of heating effects, applied voltage biases, and the dielectric environment. [152] In another approach, aligned arrays of (6,5) SWCNTs were used to fabricate on-chip polarized light emitters. Evaporation-induced self-assembly was used for large-area fabrication of these devices, with an individual device channel area of 4 × 10 µm 2 .…”

Section: Electrically Driven Swcnt Optical Emittersmentioning

confidence: 99%

Chirality‐Enriched Carbon Nanotubes for Next‐Generation Computing

Rojas

Hersam

2020

Advanced Materials

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electronic, [3-4,4] and functional requirements. [5] Conventional silicon integrated circuit (IC) technology faces significant challenges in meeting these demands due to its limited mechanical flexibility, high temperature processing, and scaling limitations. Emerging alternative computing platforms based on other crystalline semiconductors suffer from similar limitations. Consequently, nextgeneration computing necessitates the exploration of radically different electronic materials. Single-walled carbon nanotubes (SWCNTs) are among the most promising and highly studied nanoelectronic materials. Due to their small size, [6,7] solutionprocessability, [8] chemical stability, [9] and chirality-dependent optoelectronic properties, [10] SWCNTs offer a number of unique advantages and are compatible with the complex requirements of future computing devices. Recent advances in chiral enrichment of polydisperse SWCNTs [8,10] have allowed their use as semiconducting channels in diverse settings including charge transport devices, [2] optical emitters and detectors, [11,12] and chemical sensors. [2,3,13,14] With this tunable functionality, a range of SWCNT-based computing applications have been realized, such as printed digital logic, [15] sub-10 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs), [16] neuromorphic devices, [17] single-photon emitters (SPE), [18] and enantiomer-recognition sensors. [14] Herein, we discuss recent advances in SWCNT-based computing technologies that process, manage, and communicate information, with an emphasis on the enabling role of chiral enrichment. Section 2.1 defines the different levels of chiral enrichment. Sections 2.2 and 2.3 describe direct growth methods and post-processing purification of SWCNTs for electronic-type and monochiral enrichment. Section 3 discusses applications of electronic-type-enriched SWCNTs such as wearables, highly scaled FETs, 3D logic-memory integration, and neuromorphic devices. Section 4 outlines applications of monochiral-enriched SWCNTs including monochiral FETs, optical emitters, photodetectors, and optoelectronic ICs. Section 5 considers recent progress toward enantiomerically pure SWCNTs. Finally, Section 6 presents an outlook for SWCNTs in next-generation computing applications including a delineation of remaining challenges and future opportunities. For the past half century, silicon has served as the primary material platform for integrated circuit technology. However, the recent proliferation of nontraditional electronics, such as wearables, embedded systems, and lowpower portable devices, has led to increasingly complex mechanical and electrical performance requirements. Among emerging electronic materials, single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation computing as a result of their superlative electrical, optical, and mechanical properties. Moreover, their chirality-dependent properties enable a wide range of emerging electronic applications including sub-10 nm complementary fie...

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Cold exciton electroluminescence from air-suspended carbon nanotube split-gate devices

Cited by 27 publications

References 35 publications

Room-Temperature Single-Photon Emission from Micrometer-Long Air-Suspended Carbon Nanotubes

Room-Temperature Single-Photon Emission from Micrometer-Long Air-Suspended Carbon Nanotubes

Recent Developments and Novel Applications of Thin Film, Light‐Emitting Transistors

Chirality‐Enriched Carbon Nanotubes for Next‐Generation Computing

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